CEM2939 Specs and Replacement
Type Designator: CEM2939
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.5(4.8) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10(8.4) nS
Cossⓘ - Output Capacitance: 230(205) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.055) Ohm
Package: SO8
CEM2939 substitution
CEM2939 datasheet
cem2939.pdf
CEM2939 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 20V, 6.5A, RDS(ON) = 30m @VGS = 4.5V. RDS(ON) = 43m @VGS = 2.5V. -20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 90m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 High power and current handing capability. 8 7 6 5 Lead free product is acquired. Sur... See More ⇒
Detailed specifications: CEM0215 , CEM0310 , CEM0410 , CEM0415 , CEM1010 , CEM2182 , CEM2539A , CEM26138 , AON7410 , CEM3032 , CEM3060 , CEM3109 , CEM3120 , CEA3252 , CEB10N65 , CEB12N65 , CEC8218 .
History: BUZ21
Keywords - CEM2939 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
