CEM2939 Datasheet. Specs and Replacement

Type Designator: CEM2939  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5(4.8) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10(8.4) nS

Cossⓘ - Output Capacitance: 230(205) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.055) Ohm

Package: SO8

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CEM2939 datasheet

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CEM2939

CEM2939 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 20V, 6.5A, RDS(ON) = 30m @VGS = 4.5V. RDS(ON) = 43m @VGS = 2.5V. -20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 90m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 High power and current handing capability. 8 7 6 5 Lead free product is acquired. Sur... See More ⇒

Detailed specifications: CEM0215, CEM0310, CEM0410, CEM0415, CEM1010, CEM2182, CEM2539A, CEM26138, AON6380, CEM3032, CEM3060, CEM3109, CEM3120, CEA3252, CEB10N65, CEB12N65, CEC8218

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.