All MOSFET. CEM2939 Datasheet

 

CEM2939 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM2939
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 6.5(4.8) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 10(8.4) nS
   Cossⓘ - Output Capacitance: 230(205) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.055) Ohm
   Package: SO8

 CEM2939 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM2939 Datasheet (PDF)

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 cem2939.pdf

CEM2939 CEM2939

CEM2939Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES520V, 6.5A, RDS(ON) = 30m @VGS = 4.5V. RDS(ON) = 43m @VGS = 2.5V.-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 90m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D2High power and current handing capability.8 7 6 5Lead free product is acquired.Sur

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History: 2N6849

 

 
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