All MOSFET. CEM2939 Datasheet

 

CEM2939 Datasheet and Replacement


   Type Designator: CEM2939
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.5(4.8) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10(8.4) nS
   Cossⓘ - Output Capacitance: 230(205) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03(0.055) Ohm
   Package: SO8
 
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CEM2939 Datasheet (PDF)

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CEM2939

CEM2939Dual Enhancement Mode Field Effect Transistor (N and P Channel)FEATURES520V, 6.5A, RDS(ON) = 30m @VGS = 4.5V. RDS(ON) = 43m @VGS = 2.5V.-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 90m @VGS = -2.5V.Super high dense cell design for extremely low RDS(ON).D1 D1 D2 D2High power and current handing capability.8 7 6 5Lead free product is acquired.Sur

Datasheet: CEM0215 , CEM0310 , CEM0410 , CEM0415 , CEM1010 , CEM2182 , CEM2539A , CEM26138 , RFP50N06 , CEM3032 , CEM3060 , CEM3109 , CEM3120 , CEA3252 , CEB10N65 , CEB12N65 , CEC8218 .

History: 11NM70L-T2Q-T | IRFU015 | NCE0125AI

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