CED2303 Datasheet and Replacement
Type Designator: CED2303
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO251
CED2303 substitution
CED2303 Datasheet (PDF)
ced2303 ceu2303.pdf

CED2303/CEU2303P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -9A, RDS(ON) = 200m @VGS = -10V. RDS(ON) = 320m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)
Datasheet: CEB50P03 , CEB6601 , CEB95P04 , CED05P03 , CED11P20 , CED12P10 , CED20P06 , CED20P10 , IRF9540N , CED30P10 , CED3301 , CED3423 , CED4201 , CED4301 , CED4311 , CED6601 , CED6861 .
Keywords - CED2303 MOSFET datasheet
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