CED2303 Datasheet. Specs and Replacement
Type Designator: CED2303 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO251
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CED2303 datasheet
ced2303 ceu2303.pdf
CED2303/CEU2303 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -9A, RDS(ON) = 200m @VGS = -10V. RDS(ON) = 320m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ... See More ⇒
Detailed specifications: CEB50P03, CEB6601, CEB95P04, CED05P03, CED11P20, CED12P10, CED20P06, CED20P10, IRFP260, CED30P10, CED3301, CED3423, CED4201, CED4301, CED4311, CED6601, CED6861
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