CED6861 MOSFET. Datasheet pdf. Equivalent
Type Designator: CED6861
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 31 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 4 nS
Drain-Source Capacitance (Cd): 65 pF
Maximum Drain-Source On-State Resistance (Rds): 0.132 Ohm
Package: TO251
CED6861 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED6861 Datasheet (PDF)
1.1. ced6861 ceu6861.pdf 
Size:440K _cet
CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132m? @VGS = -10V. RDS(ON) = 195m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM
Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .
