All MOSFET. CED6861 Datasheet


CED6861 MOSFET. Datasheet pdf. Equivalent

Type Designator: CED6861

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 31 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 65 pF

Maximum Drain-Source On-State Resistance (Rds): 0.132 Ohm

Package: TO251

CED6861 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CED6861 Datasheet (PDF)

0.1. ced6861 ceu6861.pdf Size:440K _cet


CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132mΩ @VGS = -10V. RDS(ON) = 195mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE M

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


Back to Top