CED6861 Datasheet. Specs and Replacement
Type Designator: CED6861 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm
Package: TO251
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CED6861 datasheet
ced6861 ceu6861.pdf
CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132m @VGS = -10V. RDS(ON) = 195m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE M... See More ⇒
Detailed specifications: CED2303, CED30P10, CED3301, CED3423, CED4201, CED4301, CED4311, CED6601, AON7506, CED95P04, CEF14P20, CEF15P15, CEF6601, CEH2305, CEH2313, CEH2321, CEH2321A
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
