All MOSFET. CED6861 Datasheet

 

CED6861 Datasheet and Replacement


   Type Designator: CED6861
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm
   Package: TO251
 

 CED6861 substitution

   - MOSFET ⓘ Cross-Reference Search

 

CED6861 Datasheet (PDF)

 ..1. Size:440K  cet
 ced6861 ceu6861.pdf pdf_icon

CED6861

CED6861/CEU6861P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -12A, RDS(ON) = 132m @VGS = -10V. RDS(ON) = 195m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE M

Datasheet: CED2303 , CED30P10 , CED3301 , CED3423 , CED4201 , CED4301 , CED4311 , CED6601 , AON7506 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , CEH2321A .

History: IPD80R280P7 | IRHMS597Z60 | CEP50N06 | JCS640FH | HAT1048RJ | BRB50N06 | IRF7240TRPBF

Keywords - CED6861 MOSFET datasheet

 CED6861 cross reference
 CED6861 equivalent finder
 CED6861 lookup
 CED6861 substitution
 CED6861 replacement

 

 
Back to Top

 


 
.