CED6861 Spec and Replacement
Type Designator: CED6861
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm
Package: TO251
CED6861 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED6861 Specs
ced6861 ceu6861.pdf
CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132m @VGS = -10V. RDS(ON) = 195m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE M... See More ⇒
Detailed specifications: CED2303 , CED30P10 , CED3301 , CED3423 , CED4201 , CED4301 , CED4311 , CED6601 , IRFB3607 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , CEH2321A .
History: CS6N70B3D1-G
Keywords - CED6861 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: CS6N70B3D1-G
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