CEF6601 Datasheet. Specs and Replacement

Type Designator: CEF6601  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm

Package: TO220F

  📄📄 Copy 

CEF6601 substitution

- MOSFET ⓘ Cross-Reference Search

 

CEF6601 datasheet

 ..1. Size:428K  cet
 cep6601 ceb6601 cef6601.pdf pdf_icon

CEF6601

CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -19A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F S ABSOLUTE MAXIMUM RATING... See More ⇒

Detailed specifications: CED4201, CED4301, CED4311, CED6601, CED6861, CED95P04, CEF14P20, CEF15P15, CS150N03A8, CEH2305, CEH2313, CEH2321, CEH2321A, CEH2331, CEH3456, CEM2163, CEM2187

Keywords - CEF6601 MOSFET specs

 CEF6601 cross reference

 CEF6601 equivalent finder

 CEF6601 pdf lookup

 CEF6601 substitution

 CEF6601 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.