CEF6601 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEF6601
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 19 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 4 nS
Drain-Source Capacitance (Cd): 95 pF
Maximum Drain-Source On-State Resistance (Rds): 0.086 Ohm
Package: TO220F
CEF6601 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEF6601 Datasheet (PDF)
1.1. cep6601 ceb6601 cef6601.pdf 
Size:428K _cet
CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -19A, RDS(ON) = 86m? @VGS = -10V. RDS(ON) = 125m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F S ABSOLUTE MAXIMUM RATINGS Tc =
Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .
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