All MOSFET. CEF6601 Datasheet

 

CEF6601 Datasheet and Replacement


   Type Designator: CEF6601
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: TO220F
 

 CEF6601 substitution

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CEF6601 Datasheet (PDF)

 ..1. Size:428K  cet
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CEF6601

CEP6601/CEB6601 CEF6601P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -19A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220F SABSOLUTE MAXIMUM RATING

Datasheet: CED4201 , CED4301 , CED4311 , CED6601 , CED6861 , CED95P04 , CEF14P20 , CEF15P15 , IRFP450 , CEH2305 , CEH2313 , CEH2321 , CEH2321A , CEH2331 , CEH3456 , CEM2163 , CEM2187 .

History: IRFY120 | JMSL0303TG | STD12N06-1

Keywords - CEF6601 MOSFET datasheet

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