CEF6601 Datasheet and Replacement
Type Designator: CEF6601
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 22.6 nC
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
Package: TO220F
CEF6601 substitution
CEF6601 Datasheet (PDF)
..1. Size:428K cet
cep6601 ceb6601 cef6601.pdf
cep6601 ceb6601 cef6601.pdf
CEP6601/CEB6601 CEF6601P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -19A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220F SABSOLUTE MAXIMUM RATING
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