All MOSFET. CEF6601 Datasheet

 

CEF6601 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEF6601

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 62.5 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 95 pF

Maximum Drain-Source On-State Resistance (Rds): 0.086 Ohm

Package: TO220F

CEF6601 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEF6601 Datasheet (PDF)

1.1. cep6601 ceb6601 cef6601.pdf Size:428K _cet

CEF6601
CEF6601

CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -19A, RDS(ON) = 86m? @VGS = -10V. RDS(ON) = 125m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F S ABSOLUTE MAXIMUM RATINGS Tc =

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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