All MOSFET. CEH2331 Datasheet

 

CEH2331 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEH2331

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 5.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.048 Ohm

Package: TSOP6

CEH2331 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEH2331 Datasheet (PDF)

0.1. ceh2331.pdf Size:428K _cet

CEH2331 CEH2331

CEH2331 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -5.2A , RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA

9.1. ceh2321a.pdf Size:447K _cet

CEH2331 CEH2331

CEH2321A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead-free plating ; RoHS compliant. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise note

9.2. ceh2310.pdf Size:1163K _cet

CEH2331 CEH2331

CEH2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 50mΩ @VGS = 2.5V. RDS(ON) = 60mΩ @VGS = 1.8V. D(1,2,5,6,) High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. 4 5 TSOP-6 package. 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE

 9.3. ceh2316.pdf Size:164K _cet

CEH2331 CEH2331

CEH2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6A , RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit

9.4. ceh2321.pdf Size:227K _cet

CEH2331 CEH2331

CEH2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 80mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol

 9.5. ceh2305.pdf Size:302K _cet

CEH2331 CEH2331

CEH2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.9A , RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 119mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D(1,2,5,6,) Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA

9.6. ceh2313.pdf Size:340K _cet

CEH2331 CEH2331

CEH2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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