CEM3083 MOSFET: P-Ch, 30V, 13A. Full datasheet with pinout, specifications and replacement transistor list

CEM3083 Datasheet (PDF)

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cem3083.pdf pdf_icon

CEM3083P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -13A, RDS(ON) = 10m @VGS = -10V. RDS(ON) = 15.5m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

9.1. Size:385K cet
cem3053.pdf pdf_icon

CEM3053P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -15A, RDS(ON) = 7m @VGS = -10V. RDS(ON) = 15m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package. ESD Protected: 4000 VSO-81 2 3 41 S S S GABSOLUT

9.2. Size:618K cet
cem3032.pdf pdf_icon

CEM3032N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 18A, RDS(ON) = 4.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un

9.3. Size:418K cet
cem3060.pdf pdf_icon

CEM3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 14A, RDS(ON) = 7.8m @VGS = 10V. RDS(ON) = 11.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw

Datasheet: CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , RFP50N06 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 .