All MOSFET. CEM3083 Datasheet

 

CEM3083 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM3083
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Maximum Power Dissipation (Pd): 2.5 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 13 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 37.9 nC
   Rise Time (tr): 11.2 nS
   Drain-Source Capacitance (Cd): 465 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
   Package: SO8

 CEM3083 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM3083 Datasheet (PDF)

 ..1. Size:617K  cet
cem3083.pdf

CEM3083
CEM3083

CEM3083P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -13A, RDS(ON) = 10m @VGS = -10V. RDS(ON) = 15.5m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

 9.1. Size:418K  cet
cem3060.pdf

CEM3083
CEM3083

CEM3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 14A, RDS(ON) = 7.8m @VGS = 10V. RDS(ON) = 11.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw

 9.2. Size:618K  cet
cem3032.pdf

CEM3083
CEM3083

CEM3032N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 18A, RDS(ON) = 4.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un

 9.3. Size:385K  cet
cem3053.pdf

CEM3083
CEM3083

CEM3053P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -15A, RDS(ON) = 7m @VGS = -10V. RDS(ON) = 15m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package. ESD Protected: 4000 VSO-81 2 3 41 S S S GABSOLUT

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 18N50 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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