All MOSFET. CEM3083 Datasheet

 

CEM3083 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEM3083

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 37.9 nC

Rise Time (tr): 11.2 nS

Drain-Source Capacitance (Cd): 465 pF

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: SO8

CEM3083 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM3083 Datasheet (PDF)

0.1. cem3083.pdf Size:617K _cet

CEM3083 CEM3083

CEM3083P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -13A, RDS(ON) = 10m @VGS = -10V. RDS(ON) = 15.5m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless oth

9.1. cem3060.pdf Size:418K _cet

CEM3083 CEM3083

CEM3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 14A, RDS(ON) = 7.8m @VGS = 10V. RDS(ON) = 11.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherw

9.2. cem3032.pdf Size:618K _cet

CEM3083 CEM3083

CEM3032N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 18A, RDS(ON) = 4.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41 S S S GABSOLUTE MAXIMUM RATINGS TA = 25 C un

 9.3. cem3053.pdf Size:385K _cet

CEM3083 CEM3083

CEM3053P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -15A, RDS(ON) = 7m @VGS = -10V. RDS(ON) = 15m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D D D DLead-free plating ; RoHS compliant.8 7 6 5Surface mount Package. ESD Protected: 4000 VSO-81 2 3 41 S S S GABSOLUT

Datasheet: CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 , IRF460 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , CEM3407L , CEM4201 , CEM4207 , CEM4301 .

 

 
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