2N6851 Datasheet and Replacement
Type Designator: 2N6851
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 34.8(max) nC
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO39
2N6851 substitution
2N6851 Datasheet (PDF)
2n6851 irff9230.pdf

PD - 90551DIRFF9230 JANTX2N6851REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851HEXFETTRANSISTORS JANS2N6851THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9230 -200V 0.80 -4.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry
Datasheet: 2N6802JANTXV , 2N6802SM , 2N6823 , 2N6826 , 2N6845 , 2N6847 , 2N6849 , 2N6849L , 2N60 , 2N6901 , 2N6901JANTX , 2N6901JANTXV , 2N6902 , 2N6902JANTX , 2N6902JANTXV , 2N6903 , 2N6903JANTX .
History: IRFM240
Keywords - 2N6851 MOSFET datasheet
2N6851 cross reference
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History: IRFM240



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