2N6851 Specs and Replacement
Type Designator: 2N6851
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO39
2N6851 substitution
2N6851 datasheet
2n6851 irff9230.pdf
PD - 90551D IRFF9230 JANTX2N6851 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851 HEXFET TRANSISTORS JANS2N6851 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9230 -200V 0.80 -4.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry... See More ⇒
Detailed specifications: 2N6802JANTXV , 2N6802SM , 2N6823 , 2N6826 , 2N6845 , 2N6847 , 2N6849 , 2N6849L , 20N50 , 2N6901 , 2N6901JANTX , 2N6901JANTXV , 2N6902 , 2N6902JANTX , 2N6902JANTXV , 2N6903 , 2N6903JANTX .
Keywords - 2N6851 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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