2N6851 Datasheet. Specs and Replacement

Type Designator: 2N6851  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO39

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2N6851 datasheet

 ..1. Size:131K  international rectifier
 2n6851 irff9230.pdf pdf_icon

2N6851

PD - 90551D IRFF9230 JANTX2N6851 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851 HEXFET TRANSISTORS JANS2N6851 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9230 -200V 0.80 -4.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry... See More ⇒

Detailed specifications: 2N6802JANTXV, 2N6802SM, 2N6823, 2N6826, 2N6845, 2N6847, 2N6849, 2N6849L, IRF1405, 2N6901, 2N6901JANTX, 2N6901JANTXV, 2N6902, 2N6902JANTX, 2N6902JANTXV, 2N6903, 2N6903JANTX

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