All MOSFET. 2N6851 Datasheet


2N6851 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6851

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 34.8 nC

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO39

2N6851 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2N6851 Datasheet (PDF)

1.1. 2n6851 irff9230.pdf Size:131K _international_rectifier


PD - 90551D IRFF9230 JANTX2N6851 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851 HEXFET?TRANSISTORS JANS2N6851 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9230 -200V 0.80? -4.0A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique

Datasheet: 2N6802JANTXV , 2N6802SM , 2N6823 , 2N6826 , 2N6845 , 2N6847 , 2N6849 , 2N6849L , IRF9640 , 2N6901 , 2N6901JANTX , 2N6901JANTXV , 2N6902 , 2N6902JANTX , 2N6902JANTXV , 2N6903 , 2N6903JANTX .


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