KMA4D5P20XA Datasheet. Specs and Replacement

Type Designator: KMA4D5P20XA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm

Package: TSOP6

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KMA4D5P20XA datasheet

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KMA4D5P20XA

SEMICONDUCTOR KMA4D5P20XA TECHNICAL DATA P-CH Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for cellular phone and netebook computer power management and other battery powered circuits. FEATURES VDSS=-20V, ID=-4.5A. Drain... See More ⇒

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KMA4D5P20XA

SEMICONDUCTOR KMA4D5P20X TECHNICAL DATA P-CH Trench MOSFET General Description It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES VDSS=-20V, ID=-4.5A. Drain-Source ON Resistance. RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A Super High Dense Cell Design for Extremely Low RDS(ON) MAXIMUM RATING... See More ⇒

Detailed specifications: KMA010P20Q, KMA2D0DP20X, KMA2D4P20SA, KMA2D7DP20X, KMA2D8P20X, KMA3D0N20SA, KMA3D6N20SA, KMA4D5P20X, 18N50, KMA5D8DP20Q, KMA6D5P20Q, KMA7D0NP30Q, KMB010P30QA, KMB012N30Q, KMB012N40DA, KMB014P30QA, KMB030N30D

Keywords - KMA4D5P20XA MOSFET specs

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