FDP4030L Datasheet. Specs and Replacement

Type Designator: FDP4030L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO220

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FDP4030L datasheet

 ..1. Size:392K  fairchild semi
 fdp4030l fdb4030l.pdf pdf_icon

FDP4030L

March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 20 A, 30 V. RDS(ON) = 0.035 @ VGS=10 V transistors are produced using Fairchild's proprietary, RDS(ON) = 0.055 @ VGS=4.5V. high cell density, DMOS technology. This very high Critical DC electrical parame... See More ⇒

 9.1. Size:78K  fairchild semi
 fdp4020p fdb4020p.pdf pdf_icon

FDP4030L

September 2000 FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features -16 A, -20 V. RDS(on) = 0.08 @ VGS = -4.5 V This P-Channel low threshold MOSFET has been RDS(on) = 0.11 @ VGS = -2.5 V. designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage Criti... See More ⇒

Detailed specifications: FDN339AN, FDN340P, FDN357N, FDN358P, FDN359AN, FDN360P, FDN361AN, FDP4020P, AON6426, FDP5680, FDP5690, FDP6030BL, FDP6030L, FDP6035AL, FDP6035L, FDP603AL, FDP6670AL

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