All MOSFET. FDP4030L Datasheet

 

FDP4030L Datasheet and Replacement


   Type Designator: FDP4030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO220
 

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FDP4030L Datasheet (PDF)

 ..1. Size:392K  fairchild semi
 fdp4030l fdb4030l.pdf pdf_icon

FDP4030L

March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect20 A, 30 V. RDS(ON) = 0.035 @ VGS=10 Vtransistors are produced using Fairchild's proprietary, RDS(ON) = 0.055 @ VGS=4.5V.high cell density, DMOS technology. This very highCritical DC electrical parame

 9.1. Size:78K  fairchild semi
 fdp4020p fdb4020p.pdf pdf_icon

FDP4030L

September 2000FDP4020P/FDB4020PP-Channel 2.5V Specified Enhancement Mode Field Effect TransistorGeneral DescriptionFeatures -16 A, -20 V. RDS(on) = 0.08 @ VGS = -4.5 VThis P-Channel low threshold MOSFET has beenRDS(on) = 0.11 @ VGS = -2.5 V.designed for use as a linear pass element for low voltageoutputs. In addition, the part may be used as a low voltage Criti

Datasheet: FDN339AN , FDN340P , FDN357N , FDN358P , FDN359AN , FDN360P , FDN361AN , FDP4020P , 8205A , FDP5680 , FDP5690 , FDP6030BL , FDP6030L , FDP6035AL , FDP6035L , FDP603AL , FDP6670AL .

History: IRFP150 | 2N6795-SM

Keywords - FDP4030L MOSFET datasheet

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