FDP4030L MOSFET Datasheet: N-Ch, 30V, 20A. Full specification with pinout and replacement list

FDP4030L Specs and Replacement

   Type Designator: FDP4030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 37.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO220

FDP4030L substitution

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FDP4030L datasheet

..1. Size:392K fairchild semi
fdp4030l fdb4030l.pdf pdf_icon

March 1998 FDP4030L / FDB4030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 20 A, 30 V. RDS(ON) = 0.035 @ VGS=10 V transistors are produced using Fairchild's proprietary, RDS(ON) = 0.055 @ VGS=4.5V. high cell density, DMOS technology. This very high Critical DC electrical parame... See More ⇒

9.1. Size:78K fairchild semi
fdp4020p fdb4020p.pdf pdf_icon

September 2000 FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features -16 A, -20 V. RDS(on) = 0.08 @ VGS = -4.5 V This P-Channel low threshold MOSFET has been RDS(on) = 0.11 @ VGS = -2.5 V. designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage Criti... See More ⇒

Detailed specifications: FDN339AN , FDN340P , FDN357N , FDN358P , FDN359AN , FDN360P , FDN361AN , FDP4020P , IRFP064N , FDP5680 , FDP5690 , FDP6030BL , FDP6030L , FDP6035AL , FDP6035L , FDP603AL , FDP6670AL .