KMD6D0DN30QA Datasheet. Specs and Replacement

Type Designator: KMD6D0DN30QA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: FLP8

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KMD6D0DN30QA datasheet

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KMD6D0DN30QA

SEMICONDUCTOR KMD6D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A VDSS=40V, ID=6A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 ... See More ⇒

Detailed specifications: KTK920BT, KTK920BU, KTK920T, KTK920U, KMB035N40DA, KMB6D0DN30QB, KMB6D0NS30QA, KMB7D0DN40QB, IRF9540, KMD6D0DN40Q, KMD7D5P40QA, KMD9D0DN30QA, KML0D3P20V, KML0D4N20V, KU035N06P, KU047N08P, KU086N10F

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.