KMD6D0DN30QA PDF Specs and Replacement
Type Designator: KMD6D0DN30QA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: FLP8
KMD6D0DN30QA substitution
KMD6D0DN30QA PDF Specs
kmd6d0dn40q.pdf
SEMICONDUCTOR KMD6D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A VDSS=40V, ID=6A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 ... See More ⇒
Detailed specifications: KTK920BT , KTK920BU , KTK920T , KTK920U , KMB035N40DA , KMB6D0DN30QB , KMB6D0NS30QA , KMB7D0DN40QB , 8205A , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , KU035N06P , KU047N08P , KU086N10F .
Keywords - KMD6D0DN30QA MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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