KMD6D0DN30QA MOSFET. Datasheet pdf. Equivalent
Type Designator: KMD6D0DN30QA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm
Package: FLP8
KMD6D0DN30QA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KMD6D0DN30QA Datasheet (PDF)
2.1. kmd6d0dn40q.pdf 
Size:372K _kec
SEMICONDUCTOR KMD6D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A ·VDSS=40V, ID=6A. DIM MILLIMETERS A _ + ·Drain-Source ON Resistance. 4.85
Datasheet: KTK920BT , KTK920BU , KTK920T , KTK920U , KMB035N40DA , KMB6D0DN30QB , KMB6D0NS30QA , KMB7D0DN40QB , IRF830 , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , KU035N06P , KU047N08P , KU086N10F .
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