KMD6D0DN30QA Datasheet and Replacement
Type Designator: KMD6D0DN30QA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: FLP8
KMD6D0DN30QA substitution
KMD6D0DN30QA Datasheet (PDF)
kmd6d0dn40q.pdf
SEMICONDUCTOR KMD6D0DN40QTECHNICAL DATADual N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converters. HTD PG LFEATURES AVDSS=40V, ID=6A.DIM MILLIMETERSA _+Drain-Source ON Resistance. 4.85
Datasheet: KTK920BT , KTK920BU , KTK920T , KTK920U , KMB035N40DA , KMB6D0DN30QB , KMB6D0NS30QA , KMB7D0DN40QB , 2SK3878 , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , KU035N06P , KU047N08P , KU086N10F .
Keywords - KMD6D0DN30QA MOSFET datasheet
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