All MOSFET. KMD6D0DN30QA Datasheet


KMD6D0DN30QA MOSFET. Datasheet pdf. Equivalent

Type Designator: KMD6D0DN30QA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm

Package: FLP8

KMD6D0DN30QA Transistor Equivalent Substitute - MOSFET Cross-Reference Search


KMD6D0DN30QA Datasheet (PDF)

2.1. kmd6d0dn40q.pdf Size:372K _kec


SEMICONDUCTOR KMD6D0DN40Q TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A ·VDSS=40V, ID=6A. DIM MILLIMETERS A _ + ·Drain-Source ON Resistance. 4.85

Datasheet: KTK920BT , KTK920BU , KTK920T , KTK920U , KMB035N40DA , KMB6D0DN30QB , KMB6D0NS30QA , KMB7D0DN40QB , IRF830 , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , KU035N06P , KU047N08P , KU086N10F .

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