FDP8030L Datasheet. Specs and Replacement
Type Designator: FDP8030L 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 187 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 185 nS
Cossⓘ - Output Capacitance: 2700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220
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FDP8030L substitution
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FDP8030L datasheet
fdp8030l fdb8030l.pdf
November 1999 FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.0045 @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critic... See More ⇒
fdp8030l fdb8030l.pdf
FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.0045 @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electrica... See More ⇒
fdp80n06.pdf
September 2007 UniFETTM FDP80N06 tm N-Channel MOSFET 60V, 80A, 10m Features Description RDS(on) = 8.5m ( Typ.)@ VGS = 10V, ID = 40A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge(Typ. 57nC) stripe, DMOS technology. Low Crss(Typ. 145pF) This advanced technology has been especially ... See More ⇒
Detailed specifications: FDP6030L, FDP6035AL, FDP6035L, FDP603AL, FDP6670AL, FDP7030BL, FDP7030L, FDP7045L, IRFB4110, FDR4410, FDR4420A, FDR8305N, FDR8308P, FDR836P, FDR838P, FDR8508P, FDR856P
Keywords - FDP8030L MOSFET specs
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