KF6N60I Datasheet. Specs and Replacement

Type Designator: KF6N60I  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: IPAK

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KF6N60I datasheet

 8.1. Size:1221K  kec
 kf6n60p-f.pdf pdf_icon

KF6N60I

KF6N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF6N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 6A ... See More ⇒

 8.2. Size:482K  kec
 kf6n60d-i.pdf pdf_icon

KF6N60I

KF6N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF6N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L C D _ A 6.60 + 0.20 avalanche characteristics. It is mainly suitable for electronic ballast and _ B 6.10 + 0.20 _ C 5.... See More ⇒

Detailed specifications: KF5N60F, KF5N60FZ, KF5N60I, KF5N60P, KF5N65D, KF5N65F, KF6N60D, KF6N60F, AON6426, KF7N50D, KF7N50F, KF7N50I, KF7N50P, KF7N60F, KF7N60P, KF7N65F, KF7N65P

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