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KF6N60I Specs and Replacement


   Type Designator: KF6N60I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: IPAK
 

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KF6N60I Specs

 8.1. Size:1221K  kec
 kf6n60p-f.pdf pdf_icon

KF6N60I

KF6N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF6N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 6A ... See More ⇒

 8.2. Size:482K  kec
 kf6n60d-i.pdf pdf_icon

KF6N60I

KF6N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF6N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L C D _ A 6.60 + 0.20 avalanche characteristics. It is mainly suitable for electronic ballast and _ B 6.10 + 0.20 _ C 5.... See More ⇒

Detailed specifications: KF5N60F , KF5N60FZ , KF5N60I , KF5N60P , KF5N65D , KF5N65F , KF6N60D , KF6N60F , IRFP064N , KF7N50D , KF7N50F , KF7N50I , KF7N50P , KF7N60F , KF7N60P , KF7N65F , KF7N65P .

History: VSO007N04MS-G

Keywords - KF6N60I MOSFET specs

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