FDR4410 Datasheet. Specs and Replacement

Type Designator: FDR4410  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 627 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: SUPERSOT8

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FDR4410 datasheet

 ..1. Size:220K  fairchild semi
 fdr4410.pdf pdf_icon

FDR4410

April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost 9.3 A, 30 V. RDS(ON) = 0.013 @ VGS = 10 V alternative to the popular Si4410DY. RDS(ON) = 0.020 @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). The SuperSOTTM-8 package is 40% smaller than the SO-8 package... See More ⇒

 9.1. Size:211K  fairchild semi
 fdr4420a.pdf pdf_icon

FDR4410

June 1998 FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of N-Channel Logic Level MOSFETs 11 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, have been designed to provide a low profile, small footprint RDS(ON) = 0.013 @ VGS = 4.5 V. alternative to industry standard SO-8 little foot type product. Fast switching speed. ... See More ⇒

Detailed specifications: FDP6035AL, FDP6035L, FDP603AL, FDP6670AL, FDP7030BL, FDP7030L, FDP7045L, FDP8030L, IRFP460, FDR4420A, FDR8305N, FDR8308P, FDR836P, FDR838P, FDR8508P, FDR856P, FDR858P

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