FDR4410 Datasheet and Replacement
Type Designator: FDR4410
Marking Code: 4410
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 9.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 36 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 627 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SUPERSOT8
FDR4410 substitution
FDR4410 Datasheet (PDF)
fdr4410.pdf

April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThe FDR4410 has been designed as a smaller, low cost9.3 A, 30 V. RDS(ON) = 0.013 @ VGS = 10 Valternative to the popular Si4410DY. RDS(ON) = 0.020 @ VGS = 4.5 V.High density cell design for extremely low RDS(ON).The SuperSOTTM-8 package is 40% smaller than the SO-8package
fdr4420a.pdf

June 1998 FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThe SuperSOT-8 family of N-Channel Logic Level MOSFETs11 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V,have been designed to provide a low profile, small footprintRDS(ON) = 0.013 @ VGS = 4.5 V.alternative to industry standard SO-8 little foot type product.Fast switching speed.
Datasheet: FDP6035AL , FDP6035L , FDP603AL , FDP6670AL , FDP7030BL , FDP7030L , FDP7045L , FDP8030L , IRFZ44 , FDR4420A , FDR8305N , FDR8308P , FDR836P , FDR838P , FDR8508P , FDR856P , FDR858P .
History: FDP6035L
Keywords - FDR4410 MOSFET datasheet
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FDR4410 substitution
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History: FDP6035L



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