FDR4420A Datasheet. Specs and Replacement
Type Designator: FDR4420A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 560 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SUPERSOT8
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FDR4420A datasheet
fdr4420a.pdf
June 1998 FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of N-Channel Logic Level MOSFETs 11 A, 30 V. RDS(ON) = 0.009 @ VGS = 10 V, have been designed to provide a low profile, small footprint RDS(ON) = 0.013 @ VGS = 4.5 V. alternative to industry standard SO-8 little foot type product. Fast switching speed. ... See More ⇒
fdr4410.pdf
April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost 9.3 A, 30 V. RDS(ON) = 0.013 @ VGS = 10 V alternative to the popular Si4410DY. RDS(ON) = 0.020 @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). The SuperSOTTM-8 package is 40% smaller than the SO-8 package... See More ⇒
Detailed specifications: FDP6035L, FDP603AL, FDP6670AL, FDP7030BL, FDP7030L, FDP7045L, FDP8030L, FDR4410, IRF640, FDR8305N, FDR8308P, FDR836P, FDR838P, FDR8508P, FDR856P, FDR858P, FDS3570
Keywords - FDR4420A MOSFET specs
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