KQ9N50P PDF and Equivalents Search

 

KQ9N50P Specs and Replacement


   Type Designator: KQ9N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220AB
 

 KQ9N50P substitution

   - MOSFET ⓘ Cross-Reference Search

 

KQ9N50P datasheet

 ..1. Size:391K  kec
 kq9n50p f.pdf pdf_icon

KQ9N50P

KQ9N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description TENTATIVE This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent KQ9N50P avalanche characteristics. It is mainly suitable for electronic ballast and A O C switching mode power supplies. F E DIM MILLIMETERS ... See More ⇒

Detailed specifications: KHB9D0N50P1 , KHB9D0N90F1 , KHB9D0N90N1 , KHB9D0N90NA , KHB9D0N90P1 , KHB9D5N20D , KHB9D5N20F2 , KHB9D5N20P , RFP50N06 , KMB012N30QA , KMB035N40DC , KMB054N40DC , KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , KU034N08P .

Keywords - KQ9N50P MOSFET specs

 KQ9N50P cross reference
 KQ9N50P equivalent finder
 KQ9N50P pdf lookup
 KQ9N50P substitution
 KQ9N50P replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


 
.