All MOSFET. KQ9N50P Datasheet

 

KQ9N50P Datasheet and Replacement


   Type Designator: KQ9N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220AB
 

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KQ9N50P Datasheet (PDF)

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KQ9N50P

KQ9N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description TENTATIVEThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellent KQ9N50Pavalanche characteristics. It is mainly suitable for electronic ballast andAOCswitching mode power supplies.FE DIM MILLIMETERS

Datasheet: KHB9D0N50P1 , KHB9D0N90F1 , KHB9D0N90N1 , KHB9D0N90NA , KHB9D0N90P1 , KHB9D5N20D , KHB9D5N20F2 , KHB9D5N20P , IRF2807 , KMB012N30QA , KMB035N40DC , KMB054N40DC , KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , KU034N08P .

History: BFC21 | NDD04N60Z

Keywords - KQ9N50P MOSFET datasheet

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