KQ9N50P Datasheet and Replacement
Type Designator: KQ9N50P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220AB
KQ9N50P substitution
KQ9N50P Datasheet (PDF)
kq9n50p f.pdf

KQ9N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description TENTATIVEThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellent KQ9N50Pavalanche characteristics. It is mainly suitable for electronic ballast andAOCswitching mode power supplies.FE DIM MILLIMETERS
Datasheet: KHB9D0N50P1 , KHB9D0N90F1 , KHB9D0N90N1 , KHB9D0N90NA , KHB9D0N90P1 , KHB9D5N20D , KHB9D5N20F2 , KHB9D5N20P , SKD502T , KMB012N30QA , KMB035N40DC , KMB054N40DC , KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , KU034N08P .
History: SFS03R06NF
Keywords - KQ9N50P MOSFET datasheet
KQ9N50P cross reference
KQ9N50P equivalent finder
KQ9N50P lookup
KQ9N50P substitution
KQ9N50P replacement
History: SFS03R06NF



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