KQ9N50P Datasheet. Specs and Replacement

Type Designator: KQ9N50P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220AB

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KQ9N50P datasheet

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KQ9N50P

KQ9N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description TENTATIVE This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent KQ9N50P avalanche characteristics. It is mainly suitable for electronic ballast and A O C switching mode power supplies. F E DIM MILLIMETERS ... See More ⇒

Detailed specifications: KHB9D0N50P1, KHB9D0N90F1, KHB9D0N90N1, KHB9D0N90NA, KHB9D0N90P1, KHB9D5N20D, KHB9D5N20F2, KHB9D5N20P, 18N50, KMB012N30QA, KMB035N40DC, KMB054N40DC, KMB054N40IA, KMB6D0DN35QB, KML0D4N20TV, KU024N06P, KU034N08P

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