All MOSFET. H4435S Datasheet

 

H4435S Datasheet and Replacement


   Type Designator: H4435S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SO8
 

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H4435S Datasheet (PDF)

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H4435S

Spec. No. : MOS200101) HI-SINCERITY Issued Date : 2008.01.12 Revised Date :2009.02.06 MICROELECTRONICS CORP. Page No. : 1/5 H4435S 8-Lead Plastic SO-8 Package Code: S P-Channel Enhancement-Mode MOSFET (-30V, -9.1A) H4435S Symbol & Pin Assignment Features 5 4Pin 1 / 2 / 3: Source 6 3Pin 4: Gate 7 2 RDS(on)=20m@VGS=-10V, ID=-9.1A Pin 5 / 6 / 7 / 8: Dr

Datasheet: H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , H3055MJ , H35N03J , H4422S , IRF540N , H4946DS , H4946S , H50N03J , H6968CTS , H6968S , H8205 , H8205A , H9435S .

History: IRF540ZSPBF

Keywords - H4435S MOSFET datasheet

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