H4435S Datasheet. Specs and Replacement

Type Designator: H4435S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 205 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SO8

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H4435S datasheet

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H4435S

Spec. No. MOS200101) HI-SINCERITY Issued Date 2008.01.12 Revised Date 2009.02.06 MICROELECTRONICS CORP. Page No. 1/5 H4435S 8-Lead Plastic SO-8 Package Code S P-Channel Enhancement-Mode MOSFET (-30V, -9.1A) H4435S Symbol & Pin Assignment Features 5 4 Pin 1 / 2 / 3 Source 6 3 Pin 4 Gate 7 2 RDS(on)=20m @VGS=-10V, ID=-9.1A Pin 5 / 6 / 7 / 8 Dr... See More ⇒

Detailed specifications: H2N7002, H2N7002K, H2N7002KSN, H2N7002SN, H3055LJ, H3055MJ, H35N03J, H4422S, IRF540, H4946DS, H4946S, H50N03J, H6968CTS, H6968S, H8205, H8205A, H9435S

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