H9926S Datasheet. Specs and Replacement

Type Designator: H9926S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.95 nS

Cossⓘ - Output Capacitance: 106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SO8

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H9926S datasheet

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 h9926s.pdf pdf_icon

H9926S

Spec. No. MOS200508 HI-SINCERITY Issued Date 2005.08.01 Revised Date 2005.10.06 MICROELECTRONICS CORP. Page No. 1/4 8 76 H9926S / H9926CS 5 8-Lead Plastic SO-8 1 Package Code S Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 2 3 4 H9926S Symbol & Pin Assignment Description Pin 1 Source 2 5 4 Pin 2 Gate 2 6 3 This N-Channel 2.5V specified MOSFET is a rugge... See More ⇒

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H9926S

Spec. No. MOS200513 HI-SINCERITY Issued Date 2005.10.01 Revised Date 2005.10.06 MICROELECTRONICS CORP. Page No. 1/4 H9926TS / H9926CTS 8-Lead Plastic TSSOP-8L Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Package Code TS H9926TS Symbol & Pin Assignment Description 8 7 6 5 Pin 1 Drain 1 Q2 Pin 2 / 3 Source 1 This N-Channel 2.5V specified MOSFET is a rugged gate versi... See More ⇒

Detailed specifications: H4946DS, H4946S, H50N03J, H6968CTS, H6968S, H8205, H8205A, H9435S, IRFZ44, H9926TS, HIRF630, HIRF630F, HIRF730, HIRF730F, HIRF740, HIRF740F, HIRF830

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