All MOSFET. H9926S Datasheet

 

H9926S Datasheet and Replacement


   Type Designator: H9926S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.95 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO8
 

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H9926S Datasheet (PDF)

 ..1. Size:42K  hsmc
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H9926S

Spec. No. : MOS200508HI-SINCERITYIssued Date : 2005.08.01Revised Date : 2005.10.06MICROELECTRONICS CORP.Page No. : 1/4876H9926S / H9926CS58-Lead Plastic SO-81Package Code: SDual N-Channel Enhancement-Mode MOSFET (20V, 6A)234H9926S Symbol & Pin AssignmentDescriptionPin 1: Source 25 4Pin 2: Gate 26 3This N-Channel 2.5V specified MOSFET is a rugge

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H9926S

Spec. No. : MOS200513HI-SINCERITYIssued Date : 2005.10.01Revised Date : 2005.10.06MICROELECTRONICS CORP.Page No. : 1/4H9926TS / H9926CTS8-Lead Plastic TSSOP-8LDual N-Channel Enhancement-Mode MOSFET (20V, 6A)Package Code: TSH9926TS Symbol & Pin AssignmentDescription8 7 6 5Pin 1: Drain 1Q2 Pin 2 / 3: Source 1This N-Channel 2.5V specified MOSFET is a rugged gate versi

Datasheet: H4946DS , H4946S , H50N03J , H6968CTS , H6968S , H8205 , H8205A , H9435S , 10N60 , H9926TS , HIRF630 , HIRF630F , HIRF730 , HIRF730F , HIRF740 , HIRF740F , HIRF830 .

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