HIRF630F Specs and Replacement
Type Designator: HIRF630F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220FP
HIRF630F substitution
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HIRF630F datasheet
hirf630.pdf
Spec. No. MOS200401 HI-SINCERITY Issued Date 2004.04.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/6 HIRF630 Series Pin Assignment HIRF630 / HIRF630F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This power MOSFET is designed for low voltage, high speed power switching applicati... See More ⇒
Detailed specifications: H6968CTS , H6968S , H8205 , H8205A , H9435S , H9926S , H9926TS , HIRF630 , IRF3710 , HIRF730 , HIRF730F , HIRF740 , HIRF740F , HIRF830 , HIRF830F , HIRF840 , HIRF840F .
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