HIRF830 Datasheet and Replacement
Type Designator: HIRF830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220AB
HIRF830 substitution
HIRF830 Datasheet (PDF)
hirf830.pdf

Spec. No. : MOS200407HI-SINCERITYIssued Date : 2004.10.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/4HIRF830 Series Pin AssignmentHIRF830 / HIRF830FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N - Channel MOSFETs provide the designer with the bestcombination of fast swi
hirf840.pdf

Spec. No. : MOS200505HI-SINCERITYIssued Date : 2005.06.01Revised Date : 2005.06.08MICROELECTRONICS CORP.Page No. : 1/4HIRF840 Series Pin AssignmentHIRF840 / HIRF840FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N - Channel MOSFETs provide the designer with the bestcombination of fast swi
Datasheet: H9926S , H9926TS , HIRF630 , HIRF630F , HIRF730 , HIRF730F , HIRF740 , HIRF740F , IRFB4115 , HIRF830F , HIRF840 , HIRF840F , BUZ11S2 , BUZ11S2FI , BUZ353 , BUZ354 , IRF152 .
History: 2SK2352
Keywords - HIRF830 MOSFET datasheet
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History: 2SK2352



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