HIRF830 Datasheet. Specs and Replacement

Type Designator: HIRF830  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220AB

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HIRF830 datasheet

 ..1. Size:46K  hsmc
 hirf830.pdf pdf_icon

HIRF830

Spec. No. MOS200407 HI-SINCERITY Issued Date 2004.10.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF830 Series Pin Assignment HIRF830 / HIRF830F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi... See More ⇒

 9.1. Size:47K  hsmc
 hirf840.pdf pdf_icon

HIRF830

Spec. No. MOS200505 HI-SINCERITY Issued Date 2005.06.01 Revised Date 2005.06.08 MICROELECTRONICS CORP. Page No. 1/4 HIRF840 Series Pin Assignment HIRF840 / HIRF840F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi... See More ⇒

Detailed specifications: H9926S, H9926TS, HIRF630, HIRF630F, HIRF730, HIRF730F, HIRF740, HIRF740F, AO3400, HIRF830F, HIRF840, HIRF840F, BUZ11S2, BUZ11S2FI, BUZ353, BUZ354, IRF152

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.