HIRF840 Datasheet. Specs and Replacement
Type Designator: HIRF840 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220AB
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HIRF840 datasheet
hirf840.pdf
Spec. No. MOS200505 HI-SINCERITY Issued Date 2005.06.01 Revised Date 2005.06.08 MICROELECTRONICS CORP. Page No. 1/4 HIRF840 Series Pin Assignment HIRF840 / HIRF840F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi... See More ⇒
hirf830.pdf
Spec. No. MOS200407 HI-SINCERITY Issued Date 2004.10.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF830 Series Pin Assignment HIRF830 / HIRF830F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi... See More ⇒
Detailed specifications: HIRF630, HIRF630F, HIRF730, HIRF730F, HIRF740, HIRF740F, HIRF830, HIRF830F, 7N65, HIRF840F, BUZ11S2, BUZ11S2FI, BUZ353, BUZ354, IRF152, IRF521FI, IRF522FI
Keywords - HIRF840 MOSFET specs
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