All MOSFET. IRF733FI Datasheet

 

IRF733FI MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF733FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: ISOWATT220

 IRF733FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF733FI Datasheet (PDF)

 8.1. Size:169K  international rectifier
 irf7338.pdf

IRF733FI IRF733FI

PD - 94372AIRF7338HEXFET Power MOSFETl Ultra Low On-ResistanceN-CHANNEL MOSFETN-Ch P-Ch1 8S1 D1l Dual N and P Channel MOSFET2 7l Surface MountG1 D1VDSS 12V -12Vl Available in Tape & Reel3 6S2 D245G2 D2P-CHANNEL MOSFETRDS(on) 0.034 0.150Top ViewDescriptionThese N and P channel MOSFETs from InternationalRectifier utilize advanced processing

 8.2. Size:199K  international rectifier
 irf7331.pdf

IRF733FI IRF733FI

PD - 94225IRF7331HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) Dual N-Channel MOSFET20V 30@VGS = 4.5V 7.0A Surface Mount45@VGS = 2.5V 5.6A Available in Tape & ReelDescription1 8S1 D1These N-Channel HEXFET power MOSFETs from2 7G1 D1International Rectifier utilize advanced processingtechniques to achieve the ex

 8.3. Size:194K  international rectifier
 irf7331pbf-1.pdf

IRF733FI IRF733FI

IRF7331TRPbF-1HEXFET Power MOSFETVDS 20 V1 8S1 D1RDS(on) max 302 7(@V = 4.5V) G1 D1GSmRDS(on) max 3 6S2 D245(@V = 2.5V)GS45G2 D2Qg (typical) 13 nCID Top View SO-87.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingR

 8.4. Size:486K  st
 irf730 irf731 irf732 irf733-fi.pdf

IRF733FI IRF733FI

 8.5. Size:214K  infineon
 irf7331pbf.pdf

IRF733FI IRF733FI

PD - 95266AIRF7331PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl Dual N-Channel MOSFET20V 30@VGS = 4.5V 7.0Al Surface Mount45@VGS = 2.5V 5.6Al Available in Tape & Reell Lead-FreeDescription1 8S1 D1These N-Channel HEXFET power MOSFETs from2 7G1 D1International Rectifier utilize advanced processingtechniques to achieve the extremel

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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