All MOSFET. FRF9250H Datasheet

 

FRF9250H MOSFET. Datasheet pdf. Equivalent

Type Designator: FRF9250H

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 242 nS

Maximum Drain-Source On-State Resistance (Rds): 0.315 Ohm

Package: TO254AA

FRF9250H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FRF9250H Datasheet (PDF)

3.1. frf9250.pdf Size:47K _intersil

FRF9250H FRF9250H

FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package • 14A, -200V, RDS(on) = 0.315Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD

Datasheet: FRF254R , FRF450D , FRF450H , FRF450R , FRF9150D , FRF9150H , FRF9150R , FRF9250D , BSS138 , FRF9250R , FRK150D , FRK150H , FRK150R , FRK160D , FRK160H , FRK160R , FRK250D .

 

 
Back to Top