FRF9250H Datasheet. Specs and Replacement

Type Designator: FRF9250H  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 242 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.315 Ohm

Package: TO254AA

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FRF9250H datasheet

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FRF9250H

FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 14A, -200V, RDS(on) = 0.315 TO-254AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒

Detailed specifications: FRF254R, FRF450D, FRF450H, FRF450R, FRF9150D, FRF9150H, FRF9150R, FRF9250D, RFP50N06, FRF9250R, FRK150D, FRK150H, FRK150R, FRK160D, FRK160H, FRK160R, FRK250D

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