FRF9250H MOSFET. Datasheet pdf. Equivalent
Type Designator: FRF9250H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 242 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.315 Ohm
Package: TO254AA
FRF9250H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRF9250H Datasheet (PDF)
frf9250.pdf
FRF9250D, FRF9250R,FRF9250H14A, -200V, 0.315 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETsFeatures Package 14A, -200V, RDS(on) = 0.315TO-254AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD
Datasheet: FRF254R , FRF450D , FRF450H , FRF450R , FRF9150D , FRF9150H , FRF9150R , FRF9250D , IRF2807 , FRF9250R , FRK150D , FRK150H , FRK150R , FRK160D , FRK160H , FRK160R , FRK250D .
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