FRF9250H MOSFET. Datasheet pdf. Equivalent
Type Designator: FRF9250H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 14 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 242 nS
Maximum Drain-Source On-State Resistance (Rds): 0.315 Ohm
Package: TO254AA
FRF9250H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRF9250H Datasheet (PDF)
3.1. frf9250.pdf 
Size:47K _intersil
FRF9250D, FRF9250R, FRF9250H 14A, -200V, 0.315 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package • 14A, -200V, RDS(on) = 0.315Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD
Datasheet: FRF254R , FRF450D , FRF450H , FRF450R , FRF9150D , FRF9150H , FRF9150R , FRF9250D , BSS138 , FRF9250R , FRK150D , FRK150H , FRK150R , FRK160D , FRK160H , FRK160R , FRK250D .
