All MOSFET. AP730P Datasheet

 

AP730P MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP730P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220

 AP730P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP730P Datasheet (PDF)

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 ap730p.pdf

AP730P AP730P

AP730PAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDynamic dv/dt Rating BVDSS 400V Repetitive Avalanche Rated RDS(ON) 1.0 Fast Switching ID 5.5A Simple Drive Requirement G DTO-220SDescriptionThe Advanced Power MOSFETs from APEC provide theDdesigner with the best comb

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SML50A19 | STB31L01

 

 
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