All MOSFET. AP730P Datasheet

 

AP730P Datasheet and Replacement


   Type Designator: AP730P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220
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AP730P Datasheet (PDF)

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AP730P

AP730PAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDynamic dv/dt Rating BVDSS 400V Repetitive Avalanche Rated RDS(ON) 1.0 Fast Switching ID 5.5A Simple Drive Requirement G DTO-220SDescriptionThe Advanced Power MOSFETs from APEC provide theDdesigner with the best comb

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