AP730P PDF and Equivalents Search

 

AP730P Specs and Replacement


   Type Designator: AP730P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220
 

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AP730P datasheet

 ..1. Size:79K  ape
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AP730P

AP730P Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 400V Repetitive Avalanche Rated RDS(ON) 1.0 Fast Switching ID 5.5A Simple Drive Requirement G D TO-220 S Description The Advanced Power MOSFETs from APEC provide the D designer with the best comb... See More ⇒

Detailed specifications: AP70T03GP , AP70T03GS , AP72T02GJ-HF , AP72T03GH , AP72T03GI-HF , AP72T03GJ , AP72T03GP-HF , AP72T12GP-HF , 2SK3878 , AP73T02GH-HF , AP73T02GJ-HF , AP73T03AGH-HF , AP73T03AGM-HF , AP73T03AGMT-HF , AP73T03GH-HF , AP73T03GJ-HF , AP73T03GMT-HF .

Keywords - AP730P MOSFET specs

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