AP730P Datasheet. Specs and Replacement

Type Designator: AP730P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220

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AP730P datasheet

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AP730P

AP730P Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 400V Repetitive Avalanche Rated RDS(ON) 1.0 Fast Switching ID 5.5A Simple Drive Requirement G D TO-220 S Description The Advanced Power MOSFETs from APEC provide the D designer with the best comb... See More ⇒

Detailed specifications: AP70T03GP, AP70T03GS, AP72T02GJ-HF, AP72T03GH, AP72T03GI-HF, AP72T03GJ, AP72T03GP-HF, AP72T12GP-HF, STP75NF75, AP73T02GH-HF, AP73T02GJ-HF, AP73T03AGH-HF, AP73T03AGM-HF, AP73T03AGMT-HF, AP73T03GH-HF, AP73T03GJ-HF, AP73T03GMT-HF

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