All MOSFET. 2N5912 Datasheet

 

2N5912 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N5912

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 4 V

Maximum Drain Current |Id|: 0.04 A

Maximum Junction Temperature (Tj): 150 °C

Package: TO-99

2N5912 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N5912 Datasheet (PDF)

1.1. 2n5911 2n5912.pdf Size:58K _vishay

2N5912
2N5912

2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV) 2N5911 1 to 5 25 5 1 10 2N5912 1 to 5 25 5 1 15 FEATURES BENEFITS APPLICATIONS D Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential Amps High-Frequency Performance D High Slew Rate D High-Spe

1.2. 2n5911 2n5912.pdf Size:24K _calogic

2N5912
2N5912

Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise specified) A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range

 5.1. 2n591.pdf Size:311K _rca

2N5912

5.2. 2n5910 pn5910 2n5771.pdf Size:65K _central

2N5912

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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