2N5912 Datasheet and Replacement
Type Designator: 2N5912
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 0.04 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Package: TO-99
2N5912 substitution
2N5912 Datasheet (PDF)
2n5911 2n5912.pdf

2N5911/5912Vishay SiliconixMatched N-Channel JFET PairsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 VGS2j Max (mV)2N5911 1 to 5 25 5 1 102N5912 1 to 5 25 5 1 15FEATURES BENEFITS APPLICATIONSD Two-Chip Design D Minimum Parasitics Ensuring Maximum D Wideband Differential AmpsHigh-Frequency PerformanceD High
2n5911 2n5912.pdf

Dual N-Channel JFETHigh Frequency AmplifierCORPORATION2N5911 / 2N5912FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise specified)A Tight Tracking Low Insertion Loss Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Good Matching Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Te
2n5910 pn5910 2n5771.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
Datasheet: 2N5903 , 2N5904 , 2N5905 , 2N5906 , 2N5907 , 2N5908 , 2N5909 , 2N5911 , 2SK3568 , 2N5949 , 2N5950 , 2N5951 , 2N5952 , 2N5953 , 2N6449 , 2N6450 , 2N6451 .
Keywords - 2N5912 MOSFET datasheet
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History: 2SK3135S | AOB288L



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