All MOSFET. 9N100 Datasheet


9N100 MOSFET. Datasheet pdf. Equivalent

Type Designator: 9N100

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 95 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO-247

9N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


9N100 Datasheet (PDF)

1.1. 9n100.pdf Size:208K _utc


UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in

1.2. sdf9n100.pdf Size:162K _solitron


Datasheet: SUM201MN , SUM202MN , 8N90 , 9N90 , 10N90 , 11N90 , 12N90 , 9N95 , IRFP250 , 1N90 , 2N90 , 3N90 , 4N90 , 5N90 , 6N90 , 7N90 , 1N80 .





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