9N100 Datasheet. Specs and Replacement

Type Designator: 9N100  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-247

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9N100 datasheet

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9N100

UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pul... See More ⇒

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Detailed specifications: SUM201MN, SUM202MN, 8N90, 9N90, 10N90, 11N90, 12N90, 9N95, AON6414A, 1N90, 2N90, 3N90, 4N90, 5N90, 6N90, 7N90, 1N80

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs