9N100 Datasheet and Replacement
Type Designator: 9N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-247
9N100 substitution
9N100 Datasheet (PDF)
9n100.pdf
UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pul
Datasheet: SUM201MN , SUM202MN , 8N90 , 9N90 , 10N90 , 11N90 , 12N90 , 9N95 , IRF3710 , 1N90 , 2N90 , 3N90 , 4N90 , 5N90 , 6N90 , 7N90 , 1N80 .
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