All MOSFET. 9N100 Datasheet

 

9N100 Datasheet and Replacement


   Type Designator: 9N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-247
 

 9N100 substitution

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9N100 Datasheet (PDF)

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9N100

UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

 0.1. Size:162K  solitron
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9N100

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9N100

 0.3. Size:57K  solitron
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9N100

Datasheet: SUM201MN , SUM202MN , 8N90 , 9N90 , 10N90 , 11N90 , 12N90 , 9N95 , AON6414A , 1N90 , 2N90 , 3N90 , 4N90 , 5N90 , 6N90 , 7N90 , 1N80 .

History: FDB86360F085 | STD16NF06LT4 | FDB9506L-F085 | SML30J130F | WST3401A | SUP70060E | NTD20P06LG

Keywords - 9N100 MOSFET datasheet

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