All MOSFET. 8N50H Datasheet

 

8N50H Datasheet and Replacement


   Type Designator: 8N50H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12.8 nC
   tr ⓘ - Rise Time: 55 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220F
 

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8N50H Datasheet (PDF)

 ..1. Size:199K  utc
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8N50H

UNISONIC TECHNOLOGIES CO., LTD 8N50H Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1The UTC 8N50H is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe TO-220Fand DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pul

 0.1. Size:150K  kia
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8N50H

18A500V18N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThe KIA18N50H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction.2. Features R =0.25 @V =10VDS(on) GS Lowgate c

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 60N06

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