3N50Z Datasheet. Specs and Replacement

Type Designator: 3N50Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO-220F

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3N50Z datasheet

 ..1. Size:173K  utc
3n50z.pdf pdf_icon

3N50Z

UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N50Z is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high e... See More ⇒

 0.1. Size:119K  onsemi
ndd03n50z.pdf pdf_icon

3N50Z

NDD03N50Z N-Channel Power MOSFET 500 V, 3.3 W Features Low ON Resistance Low Gate Charge http //onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(on) (MAX) @ 1.15 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 500 V 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Rating Symbol Value Unit... See More ⇒

 0.2. Size:619K  trinnotech
tmp3n50z tmpf3n50z.pdf pdf_icon

3N50Z

TMP3N50Z(G)/TMPF3N50Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒

 0.3. Size:467K  trinnotech
tmd3n50z tmu3n50z.pdf pdf_icon

3N50Z

TMD3N50Z(G)/TMU3N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A ... See More ⇒

Detailed specifications: UF840, UK3568, UF450, UF460, 1N50, 1N50Z, 2N50, 3N50, 2SK3568, 4N50, 5N50, 5N50K, 6N50, 7N50, 8N50, 1N40, 2N40

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