3N50Z Datasheet and Replacement
Type Designator: 3N50Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-220F
3N50Z substitution
3N50Z Datasheet (PDF)
3n50z.pdf

UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1TO-220FThe UTC 3N50Z is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high e
ndd03n50z.pdf

NDD03N50ZN-Channel Power MOSFET500 V, 3.3 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(on) (MAX) @ 1.15 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant500 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol Value Unit
tmp3n50z tmpf3n50z.pdf

TMP3N50Z(G)/TMPF3N50Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A
tmd3n50z tmu3n50z.pdf

TMD3N50Z(G)/TMU3N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A
Datasheet: UF840 , UK3568 , UF450 , UF460 , 1N50 , 1N50Z , 2N50 , 3N50 , SPP20N60C3 , 4N50 , 5N50 , 5N50K , 6N50 , 7N50 , 8N50 , 1N40 , 2N40 .
History: FQPF7N65C | NTTFS5820NL
Keywords - 3N50Z MOSFET datasheet
3N50Z cross reference
3N50Z equivalent finder
3N50Z lookup
3N50Z substitution
3N50Z replacement
History: FQPF7N65C | NTTFS5820NL



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