3N50Z MOSFET. Datasheet pdf. Equivalent

   Type Designator: 3N50Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-220F

3N50Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

3N50Z Datasheet (PDF)

..1. Size:173K utc
3n50z.pdf

UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1TO-220FThe UTC 3N50Z is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high e

0.1. Size:119K onsemi
ndd03n50z.pdf

NDD03N50ZN-Channel Power MOSFET500 V, 3.3 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(on) (MAX) @ 1.15 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant500 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol Value Unit

0.2. Size:619K trinnotech
tmp3n50z tmpf3n50z.pdf