All MOSFET. 3N50Z Datasheet

 

3N50Z Datasheet and Replacement


   Type Designator: 3N50Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-220F
 

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3N50Z Datasheet (PDF)

 ..1. Size:173K  utc
 3n50z.pdf pdf_icon

3N50Z

UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1TO-220FThe UTC 3N50Z is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high e

 0.1. Size:119K  onsemi
 ndd03n50z.pdf pdf_icon

3N50Z

NDD03N50ZN-Channel Power MOSFET500 V, 3.3 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(on) (MAX) @ 1.15 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant500 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol Value Unit

 0.2. Size:619K  trinnotech
 tmp3n50z tmpf3n50z.pdf pdf_icon

3N50Z

TMP3N50Z(G)/TMPF3N50Z(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

 0.3. Size:467K  trinnotech
 tmd3n50z tmu3n50z.pdf pdf_icon

3N50Z

TMD3N50Z(G)/TMU3N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 2.5A

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Datasheet: UF840 , UK3568 , UF450 , UF460 , 1N50 , 1N50Z , 2N50 , 3N50 , 12N60 , 4N50 , 5N50 , 5N50K , 6N50 , 7N50 , 8N50 , 1N40 , 2N40 .

History: WMK13N50D1B | IRFIB6N60APBF | B4N80 | APQ39SN04AA | AOT4S60 | TMP16N60 | SE20040

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