All MOSFET. 13N40 Datasheet

 

13N40 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 13N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 48 W
   Maximum Drain-Source Voltage |Vds|: 400 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 13 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 79 nC
   Rise Time (tr): 20 nS
   Drain-Source Capacitance (Cd): 218 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
   Package: TO-220F

 13N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

13N40 Datasheet (PDF)

 ..1. Size:151K  utc
13n40.pdf

13N40 13N40

UNISONIC TECHNOLOGIES CO., LTD 13N40 Preliminary Power MOSFET 13A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N40 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Italso can withstand

 0.1. Size:104K  philips
php13n40e 3.pdf

13N40 13N40

Philips Semiconductors Product specification PowerMOS transistors PHP13N40E, PHB13N40E, PHW13N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 13.7 Ag Low thermal resistanceRDS(ON) 0.35 sGENERAL DESCRIPTION

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top