All MOSFET. 18N25 Datasheet


18N25 MOSFET. Datasheet pdf. Equivalent

Type Designator: 18N25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 138 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 130 nS

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: TO-263, TO-220F

18N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


18N25 Datasheet (PDF)

1.1. sum18n25-165.pdf Size:159K _upd


SUM18N25-165 Vishay Siliconix N-Channel 250-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET V(BR)DSS (V) ID (A) rDS(on) (Ω) • 175 °C Junction Temperature RoHS 0.165 at VGS = 10 V 250 18 COMPLIANT • Low Thermal Resistance Package D TO-263 G G D S Top View S Ordering Information: SUM18N25-165-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLU

1.2. sum18n25-165.pdf Size:160K _vishay


 1.3. 18n25.pdf Size:173K _utc


UNISONIC TECHNOLOGIES CO., LTD 18N25 Power MOSFET 18A, 250V N-CHANNEL POWER MOSFET 1 ? DESCRIPTION TO-220F The UTC 18N25 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resis

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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