All MOSFET. UF3055 Datasheet

 

UF3055 MOSFET. Datasheet pdf. Equivalent


   Type Designator: UF3055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-252 SOT-223

 UF3055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UF3055 Datasheet (PDF)

 ..1. Size:186K  utc
 uf3055.pdf

UF3055 UF3055

UNISONIC TECHNOLOGIES CO., LTD UF3055 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION 1TO-252As an N-channel enhancement mode power MOSFET, the UTCUF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. FEATURES 1* RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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