7N10Z Specs and Replacement
Type Designator: 7N10Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO-252
7N10Z substitution
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7N10Z datasheet
7n10z.pdf
UNISONIC TECHNOLOGIES CO., LTD 7N10Z Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10Z uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse i... See More ⇒
Detailed specifications: 30N06 , 50N06 , 60N06 , 60N08 , 6N10 , 70N06 , 75N75 , 7N10 , AO4407A , 80N08 , UF1010A , UF1010E , UF3710 , UF4N20 , UF540 , UF630 , UF640 .
Keywords - 7N10Z MOSFET specs
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7N10Z replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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