7N10Z Datasheet. Specs and Replacement

Type Designator: 7N10Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO-252

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7N10Z datasheet

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7N10Z

UNISONIC TECHNOLOGIES CO., LTD 7N10Z Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10Z uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse i... See More ⇒

Detailed specifications: 30N06, 50N06, 60N06, 60N08, 6N10, 70N06, 75N75, 7N10, IRF830, 80N08, UF1010A, UF1010E, UF3710, UF4N20, UF540, UF630, UF640

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