All MOSFET. UF1010E Datasheet

 

UF1010E MOSFET. Datasheet pdf. Equivalent


   Type Designator: UF1010E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 84 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-220 TO-220F1 TO-220F2 TO-263

 UF1010E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UF1010E Datasheet (PDF)

 ..1. Size:208K  utc
 uf1010e.pdf

UF1010E UF1010E

UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET 11 DESCRIPTION Using high technology of UTC, UTC UF1010E has the TO-220 TO-220F1features such as: low RDS(ON), fast switching, and low gate charge.Like features of all power MOSFET devices features, UTC UF1010E can satisfy almost all the requirements of high efficient device form customers. 1

 8.1. Size:218K  utc
 uf1010a.pdf

UF1010E UF1010E

UNISONIC TECHNOLOGIES CO., LTD UF1010A Power MOSFET N-CHANNEL POWER MOSFET DESCRIPTION By using high technology, UTC UF1010A has the features, such as low RDS(ON), fast switching and low gate charge. Like features of all power MOSFET devices, UTC UF1010A can satisfy almost all the 1requirements of high efficient devices form customers. TO-220 FEATURES * RDS(ON)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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