UF1010E Datasheet and Replacement
Type Designator: UF1010E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 84 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 690 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-220 TO-220F1 TO-220F2 TO-263
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UF1010E Datasheet (PDF)
uf1010e.pdf

UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET 11 DESCRIPTION Using high technology of UTC, UTC UF1010E has the TO-220 TO-220F1features such as: low RDS(ON), fast switching, and low gate charge.Like features of all power MOSFET devices features, UTC UF1010E can satisfy almost all the requirements of high efficient device form customers. 1
uf1010a.pdf

UNISONIC TECHNOLOGIES CO., LTD UF1010A Power MOSFET N-CHANNEL POWER MOSFET DESCRIPTION By using high technology, UTC UF1010A has the features, such as low RDS(ON), fast switching and low gate charge. Like features of all power MOSFET devices, UTC UF1010A can satisfy almost all the 1requirements of high efficient devices form customers. TO-220 FEATURES * RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: DG4N60 | IRHLG7670Z4 | TMPF9N70 | VSD013N10MS | FTK4438 | F5V90HVX2 | CS8N65A8H
Keywords - UF1010E MOSFET datasheet
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History: DG4N60 | IRHLG7670Z4 | TMPF9N70 | VSD013N10MS | FTK4438 | F5V90HVX2 | CS8N65A8H



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