UF1010E Datasheet. Specs and Replacement
Type Designator: UF1010E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 84 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 690 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
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UF1010E datasheet
uf1010e.pdf
UNISONIC TECHNOLOGIES CO., LTD UF1010E Power MOSFET N-CHANNEL POWER MOSFET 1 1 DESCRIPTION Using high technology of UTC, UTC UF1010E has the TO-220 TO-220F1 features such as low RDS(ON), fast switching, and low gate charge. Like features of all power MOSFET devices features, UTC UF1010E can satisfy almost all the requirements of high efficient device form customers. 1 ... See More ⇒
Detailed specifications: 60N08, 6N10, 70N06, 75N75, 7N10, 7N10Z, 80N08, UF1010A, 2SK2842, UF3710, UF4N20, UF540, UF630, UF640, UF6N15, UF8010, UFZ44
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