UT2N10 Datasheet and Replacement
Type Designator: UT2N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: TO-252 TO-92 TO-92NL
UT2N10 substitution
UT2N10 Datasheet (PDF)
ut2n10.pdf

UNISONIC TECHNOLOGIES CO., LTD UT2N10 Power MOSFET Preliminary 2 Amps,100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages.
Datasheet: UF540 , UF630 , UF640 , UF6N15 , UF8010 , UFZ44 , URFP150 , UT12N10 , IRF640 , 12P10 , 7P20 , UF9640 , UF9Z24 , UT2955 , UTT120P06 , UTT12P10 , UTT16P10 .
History: NCEP092N10AS
Keywords - UT2N10 MOSFET datasheet
UT2N10 cross reference
UT2N10 equivalent finder
UT2N10 lookup
UT2N10 substitution
UT2N10 replacement
History: NCEP092N10AS



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