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UT2N10 Spec and Replacement


   Type Designator: UT2N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: TO-252 TO-92 TO-92NL

 UT2N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT2N10 Specs

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UT2N10

UNISONIC TECHNOLOGIES CO., LTD UT2N10 Power MOSFET Preliminary 2 Amps,100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V 5V and facilitate true on-off power control directly from logic circuit supply voltages. ... See More ⇒

Detailed specifications: UF540 , UF630 , UF640 , UF6N15 , UF8010 , UFZ44 , URFP150 , UT12N10 , IRFZ44 , 12P10 , 7P20 , UF9640 , UF9Z24 , UT2955 , UTT120P06 , UTT12P10 , UTT16P10 .

History: INK0112AC1 | SL7N65C | 2SK125

Keywords - UT2N10 MOSFET specs

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