All MOSFET. UT2N10 Datasheet

 

UT2N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: UT2N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm

Package: TO-252_TO-92_TO-92NL

UT2N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

UT2N10 Datasheet (PDF)

1.1. ut2n10.pdf Size:173K _utc

UT2N10
UT2N10

UNISONIC TECHNOLOGIES CO., LTD UT2N10 Power MOSFET Preliminary 2 Amps,100 Volts N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages. The U

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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