UT2N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: UT2N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 80 pF
Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
Package: TO-252_TO-92_TO-92NL
UT2N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT2N10 Datasheet (PDF)
1.1. ut2n10.pdf 
Size:173K _utc
UNISONIC TECHNOLOGIES CO., LTD UT2N10 Power MOSFET Preliminary 2 Amps,100 Volts N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages. The U
Datasheet: UF540 , UF630 , UF640 , UF6N15 , UF8010 , UFZ44 , URFP150 , UT12N10 , 2N7000 , 12P10 , 7P20 , UF9640 , UF9Z24 , UT2955 , UTT120P06 , UTT12P10 , UTT16P10 .
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