UT2N10 Datasheet. Specs and Replacement

Type Designator: UT2N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: TO-252 TO-92 TO-92NL

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UT2N10 datasheet

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UT2N10

UNISONIC TECHNOLOGIES CO., LTD UT2N10 Power MOSFET Preliminary 2 Amps,100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V 5V and facilitate true on-off power control directly from logic circuit supply voltages. ... See More ⇒

Detailed specifications: UF540, UF630, UF640, UF6N15, UF8010, UFZ44, URFP150, UT12N10, IRFB4110, 12P10, 7P20, UF9640, UF9Z24, UT2955, UTT120P06, UTT12P10, UTT16P10

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