All MOSFET. UT2N10 Datasheet


UT2N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: UT2N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm

Package: TO-252_TO-92_TO-92NL

UT2N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

UT2N10 Datasheet (PDF)

1.1. ut2n10.pdf Size:173K _utc


UNISONIC TECHNOLOGIES CO., LTD UT2N10 Power MOSFET Preliminary 2 Amps,100 Volts N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages. The U

Datasheet: UF540 , UF630 , UF640 , UF6N15 , UF8010 , UFZ44 , URFP150 , UT12N10 , 2N7000 , 12P10 , 7P20 , UF9640 , UF9Z24 , UT2955 , UTT120P06 , UTT12P10 , UTT16P10 .

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