FRS9130H Datasheet. Specs and Replacement
Type Designator: FRS9130H 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 176 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.565 Ohm
Package: TO257AA
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FRS9130H datasheet
frs9130.pdf
FRS9130D, FRS9130R, FRS9130H 6A, -100V, 0.565 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 6A, -100V, RDS(on) = 0.565 TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(S... See More ⇒
frs9140.pdf
FRS9140D, FRS9140R, FRS9140H 11A, -100V, 0.315 Ohm, Rad Hard, June 1998 P-Channel Power MOSFETs Features Package 11A, -100V, RDS(on) = 0.315 TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD... See More ⇒
Detailed specifications: FRS244R, FRS430D, FRS430H, FRS430R, FRS440D, FRS440H, FRS440R, FRS9130D, 4N60, FRS9130R, FRS9140D, FRS9140H, FRS9140R, FRS9230D, FRS9230H, FRS9230R, FRS9240D
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