12NN10 MOSFET. Datasheet pdf. Equivalent
Type Designator: 12NN10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 2.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: SOP-8
12NN10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
12NN10 Datasheet (PDF)
1.1. 12nn10.pdf 
Size:155K _utc
UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION SOP-8 The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low Gate Charge (Typically 10nC) * 2.5A, 100V, 150m? @
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