All MOSFET. 12NN10 Datasheet

 

12NN10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 12NN10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: SOP-8

12NN10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

12NN10 Datasheet (PDF)

1.1. 12nn10.pdf Size:155K _utc

12NN10
12NN10

UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION SOP-8 The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low Gate Charge (Typically 10nC) * 2.5A, 100V, 150m? @

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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