12NN10 Datasheet and Replacement
Type Designator: 12NN10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOP-8
12NN10 substitution
12NN10 Datasheet (PDF)
12nn10.pdf

UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION SOP-8The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low Gate Charge (Typically 10nC) * 2.5A, 100V, 150m
Datasheet: TF202 , TF212 , TF215 , TF218 , K4059 , 2SK2751 , UJ0100 , 10NN15 , IRFP064N , 2N7002ZDW , UD9926 , UM6K1N , UP9971 , UT4232 , UT4812 , UT4812Z , UT4822 .
History: JMPC16N65BJ | JMPC28N20BJ | TK5Q60W
Keywords - 12NN10 MOSFET datasheet
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12NN10 equivalent finder
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History: JMPC16N65BJ | JMPC28N20BJ | TK5Q60W



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