All MOSFET. 12NN10 Datasheet

 

12NN10 Datasheet and Replacement


   Type Designator: 12NN10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOP-8
 
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12NN10 Datasheet (PDF)

 ..1. Size:155K  utc
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12NN10

UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION SOP-8The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low Gate Charge (Typically 10nC) * 2.5A, 100V, 150m

Datasheet: TF202 , TF212 , TF215 , TF218 , K4059 , 2SK2751 , UJ0100 , 10NN15 , IRFP064N , 2N7002ZDW , UD9926 , UM6K1N , UP9971 , UT4232 , UT4812 , UT4812Z , UT4822 .

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