12NN10 Datasheet. Specs and Replacement

Type Designator: 12NN10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOP-8

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12NN10 datasheet

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12NN10

UNISONIC TECHNOLOGIES CO., LTD 12NN10 Preliminary Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION SOP-8 The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low Gate Charge (Typically 10nC) * 2.5A, 100V, 150m... See More ⇒

Detailed specifications: TF202, TF212, TF215, TF218, K4059, 2SK2751, UJ0100, 10NN15, 2SK2842, 2N7002ZDW, UD9926, UM6K1N, UP9971, UT4232, UT4812, UT4812Z, UT4822

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