FSF9150D Datasheet. Specs and Replacement

Type Designator: FSF9150D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO254AA

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FSF9150D datasheet

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FSF9150D

FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K ... See More ⇒

Detailed specifications: FSF150D, FSF150R, FSF250D, FSF250R, FSF254D, FSF254R, FSF450D, FSF450R, IRF3205, FSF9150R, FSF9250D, FSF9250R, FSJ055D, FSJ055R, FSJ160D, FSJ160R, FSJ260D

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