FSJ160R Datasheet. Specs and Replacement

Type Designator: FSJ160R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO254AA

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FSJ160R datasheet

 8.1. Size:66K  intersil
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FSJ160R

FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 70A, 100V, rDS(ON) = 0.022 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (... See More ⇒

Detailed specifications: FSF450R, FSF9150D, FSF9150R, FSF9250D, FSF9250R, FSJ055D, FSJ055R, FSJ160D, IRF540N, FSJ260D, FSJ260R, FSJ264D, FSJ264R, FSJ9160D, FSJ9160R, FSJ9260D, FSJ9260R

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