FSL130R Datasheet. Specs and Replacement

Type Designator: FSL130R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO205AF

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FSL130R datasheet

 8.1. Size:54K  intersil
 fsl130.pdf pdf_icon

FSL130R

FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S... See More ⇒

 9.1. Size:45K  harris semi
 fsl13ao.pdf pdf_icon

FSL130R

FSL13AOD, S E M I C O N D U C T O R FSL13AOR Radiation Hardened, SEGR Resistant February 1998 N-Channel Power MOSFETs Features Description 9A, 100V, rDS(ON) = 0.180 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs Total Dose specifically designed for commercial and military space applications. Enhanced Power MOSFET... See More ⇒

Detailed specifications: FSJ264R, FSJ9160D, FSJ9160R, FSJ9260D, FSJ9260R, FSL110D, FSL110R, FSL130D, IRF3710, FSL13AOD, FSL13AOR, FSL230D, FSL230R, FSL234D, FSL234R, FSL23A4D, FSL23A4R

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