All MOSFET. FSL13AOD Datasheet

 

FSL13AOD Datasheet and Replacement


   Type Designator: FSL13AOD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO205AF
 

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FSL13AOD Datasheet (PDF)

 7.1. Size:45K  harris semi
 fsl13ao.pdf pdf_icon

FSL13AOD

FSL13AOD,S E M I C O N D U C T O RFSL13AORRadiation Hardened, SEGR ResistantFebruary 1998 N-Channel Power MOSFETsFeatures Description 9A, 100V, rDS(ON) = 0.180 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MOSFET

 9.1. Size:54K  intersil
 fsl130.pdf pdf_icon

FSL13AOD

FSL130D, FSL130R8A, 100V, 0.230 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

Datasheet: FSJ9160D , FSJ9160R , FSJ9260D , FSJ9260R , FSL110D , FSL110R , FSL130D , FSL130R , IRFB4110 , FSL13AOR , FSL230D , FSL230R , FSL234D , FSL234R , FSL23A4D , FSL23A4R , FSL23AOD .

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