FSL13AOD
MOSFET. Datasheet pdf. Equivalent
Type Designator: FSL13AOD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
TO205AF
FSL13AOD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSL13AOD
Datasheet (PDF)
7.1. Size:45K harris semi
fsl13ao.pdf
FSL13AOD,S E M I C O N D U C T O RFSL13AORRadiation Hardened, SEGR ResistantFebruary 1998 N-Channel Power MOSFETsFeatures Description 9A, 100V, rDS(ON) = 0.180 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MOSFET
9.1. Size:54K intersil
fsl130.pdf
FSL130D, FSL130R8A, 100V, 0.230 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S
Datasheet: FSJ9160D
, FSJ9160R
, FSJ9260D
, FSJ9260R
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, FSL110R
, FSL130D
, FSL130R
, IRF630
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