MTN50N06E3 Datasheet. Specs and Replacement

Type Designator: MTN50N06E3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 364 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TO-220AB

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MTN50N06E3 datasheet

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MTN50N06E3

Spec. No. C445E3 Issued Date 2009.05.12 CYStech Electronics Corp. Revised Date 2013.02.26 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 60V RDSON(MAX) 22 m MTN50N06E3 ID 50A Description The MTN50N06E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance ... See More ⇒

Detailed specifications: MTN4N60E3, MTN4N60FP, MTN4N60I3, MTN4N60J3, MTN4N65FP, MTN4N65I3, MTN4N65J3, MTN4N70I3, IRFP250N, MTN540J3, MTN5N50E3, MTN5N50FP, MTN5N50I3, MTN5N50J3, MTN5N60E3, MTN5N60FP, MTN5N60I3

Keywords - MTN50N06E3 MOSFET specs

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