All MOSFET. MTN50N06E3 Datasheet

 

MTN50N06E3 Datasheet and Replacement


   Type Designator: MTN50N06E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 364 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-220AB
 
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MTN50N06E3 Datasheet (PDF)

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MTN50N06E3

Spec. No. : C445E3 Issued Date : 2009.05.12 CYStech Electronics Corp.Revised Date : 2013.02.26 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS 60VRDSON(MAX) 22 m MTN50N06E3 ID 50ADescription The MTN50N06E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

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