AO4932 Datasheet and Replacement
Type Designator: AO4932
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12(20) V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 11(8) A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 2.4(3.5) nS
Cossⓘ - Output Capacitance: 128(110) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125(0.019) Ohm
Package: SO-8
AO4932 Datasheet (PDF)
ao4932.pdf

AO4932Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4932 uses advanced trench technology to provide FET1(N-Channel) FET2(N-Channel)excellent RDS(ON) and low gate charge. The two MOSFETsVDS= 30V 30Vmake a compact and efficient switch and synchronous ID= 11A (VGS=10V) 8A (VGS=10V)rectifier combination for use in DC-DC converters. A RDS(ON)
ao4932.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4932 (KO4932)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 11 A (VGS = 10V) 0.151.50 RDS(ON) 12.5m (VGS = 10V) RDS(ON) 15m (VGS = 4.5V)1 D2 5 S2/D1 6 S2/D12 D2SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 S2/D13 G1N-Channel 28 G24 S1 VDS (V) = 30V ID = 8 A
ao4938.pdf

AO493830V Dual N-Channel MOSFETTMSRFET TM SRFETGeneral Description Product SummaryThe AO4938 uses advanced trench technology to provide FET1(N-Channel) FET2(N-Channel)excellent RDS(ON) and low gate charge. The two MOSFETsVDS= 30V 30Vmake a compact and efficient switch and synchronous ID= 8.8A (VGS=10V) 8A (VGS=10V)rectifier combination for use in DC-DC converters. A RD
ao4938.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4938 (KO4938)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V1.50 0.15 ID = 8.8 A (VGS = 10V) RDS(ON) 16m (VGS = 10V) RDS(ON) 22m (VGS = 4.5V)1 D2 5 S2/D1 6 S2/D12 D2SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 S2/D13 G18 G2N-Channel 2 4 S1 VDS (V) = 30V ID = 8 A (
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