FSS923AOD MOSFET. Datasheet pdf. Equivalent
Type Designator: FSS923AOD
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 56 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.65 Ohm
Package: TO257AA
FSS923AOD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSS923AOD Datasheet (PDF)
6.1. fss923ao.pdf 
Size:45K _harris_semi
FSS923AOD, S E M I C O N D U C T O R FSS923AOR Radiation Hardened, SEGR Resistant February 1998 P-Channel Power MOSFETs Features Description • 7A, -200V, rDS(ON) = 0.650Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs • Total Dose specifically designed for commercial and military space applications. Enhanced Power MOS
8.1. fss9230.pdf Size:44K _intersil
FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description • 4A, -200V, rDS(ON) = 1.60Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD
Datasheet: FSS430D , FSS430R , FSS9130D , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , IRF9530 , FSS923AOR , FSYA250D , FSYA250R , GFB50N03 , GFB70N03 , GFD30N03 , GFP50N03 , GFP70N03 .
