All MOSFET. FSS923AOD Datasheet

 

FSS923AOD Datasheet and Replacement


   Type Designator: FSS923AOD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO257AA
 

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FSS923AOD Datasheet (PDF)

 6.1. Size:45K  harris semi
 fss923ao.pdf pdf_icon

FSS923AOD

FSS923AOD,S E M I C O N D U C T O RFSS923AORRadiation Hardened, SEGR ResistantFebruary 1998 P-Channel Power MOSFETsFeatures Description 7A, -200V, rDS(ON) = 0.650 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MOS

 8.1. Size:44K  intersil
 fss9230.pdf pdf_icon

FSS923AOD

FSS9230D,FSS9230R4A, -200V, 1.60 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 4A, -200V, rDS(ON) = 1.60 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD

Datasheet: FSS430D , FSS430R , FSS9130D , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , 5N65 , FSS923AOR , FSYA250D , FSYA250R , GFB50N03 , GFB70N03 , GFD30N03 , GFP50N03 , GFP70N03 .

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