All MOSFET. FSYA250D Datasheet

 

FSYA250D MOSFET. Datasheet pdf. Equivalent

Type Designator: FSYA250D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 27 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: SMD1

FSYA250D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FSYA250D Datasheet (PDF)

7.1. fsya250.pdf Size:54K _intersil

FSYA250D
FSYA250D

FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description • 27A, 200V, rDS(ON) = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA

Datasheet: FSS9130D , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , IRF5210 , FSYA250R , GFB50N03 , GFB70N03 , GFD30N03 , GFP50N03 , GFP70N03 , H5N2001LD , H5N2001LS .

 

 
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