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FSYA250D Spec and Replacement


   Type Designator: FSYA250D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SMD1

 FSYA250D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FSYA250D Specs

 7.1. Size:54K  intersil
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FSYA250D

FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 27A, 200V, rDS(ON) = 0.100 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA... See More ⇒

Detailed specifications: FSS9130D , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , 5N60 , FSYA250R , GFB50N03 , GFB70N03 , GFD30N03 , GFP50N03 , GFP70N03 , H5N2001LD , H5N2001LS .

History: DJD420N70T | DJD380N65T

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