FSYA250D Datasheet. Specs and Replacement

Type Designator: FSYA250D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SMD1

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FSYA250D datasheet

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FSYA250D

FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description 27A, 200V, rDS(ON) = 0.100 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA... See More ⇒

Detailed specifications: FSS9130D, FSS9130R, FSS913AOD, FSS913AOR, FSS9230D, FSS9230R, FSS923AOD, FSS923AOR, TK10A60D, FSYA250R, GFB50N03, GFB70N03, GFD30N03, GFP50N03, GFP70N03, H5N2001LD, H5N2001LS

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