HRF3205 Datasheet. Specs and Replacement
Type Designator: HRF3205 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220AB
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HRF3205 substitution
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HRF3205 datasheet
hrf3205.pdf
HRF3205, HRF3205S Data Sheet December 2001 100A, 55V, 0.008 Ohm, N-Channel, Power Features MOSFETs 100A, 55V (See Note) These are N-Channel enhancement mode silicon gate Low On-Resistance, rDS(ON) = 0.008 power field effect transistors. They are advanced power Temperature Compensating PSPICE Model MOSFETs designed, tested, and guaranteed to withstand a specified le... See More ⇒
hrf3205.pdf
isc N-Channel MOSFET Transistor HRF3205 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
Detailed specifications: HEPF2004, HEPF2007A, HP4410DY, HP4936DY, HPLR3103, HPLU3103, HR3N187, HR3N200, IRF4905, HRF3205S, HRFZ44N, HUF75229P3, HUF75307D3, HUF75307D3S, HUF75307D3ST, HUF75307P3, HUF75307T3ST
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