FQI46N15 Datasheet. Specs and Replacement

Type Designator: FQI46N15  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 45.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 320 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: I2PAK

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FQI46N15 datasheet

 ..1. Size:728K  fairchild semi
 fqb46n15 fqi46n15.pdf pdf_icon

FQI46N15

April 2000 TM QFET QFET QFET QFET FQB46N15 / FQI46N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced techno... See More ⇒

Detailed specifications: SDF03N80, SDF02N65, SDF02N20, SDD07N65, FQA18N50V2, FQA19N20C, FQA38N30, FQB46N15, AON6426, FQP10N50CF, FDB86366F085, FCH077N65FF085, FCH190N65FF085, FQT2P25, FQU1N80, FDC645N, SI3457DV

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