All MOSFET. FQI46N15 Datasheet

 

FQI46N15 Datasheet and Replacement


   Type Designator: FQI46N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 45.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 320 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: I2PAK

 FQI46N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI46N15 Datasheet (PDF)

 ..1. Size:728K  fairchild semi
 fqb46n15 fqi46n15.pdf pdf_icon

FQI46N15

April 2000 TM QFET QFET QFET QFET FQB46N15 / FQI46N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced techno... See More ⇒

Datasheet: SDF03N80 , SDF02N65 , SDF02N20 , SDD07N65 , FQA18N50V2 , FQA19N20C , FQA38N30 , FQB46N15 , IRFP064N , FQP10N50CF , FDB86366F085 , FCH077N65FF085 , FCH190N65FF085 , FQT2P25 , FQU1N80 , FDC645N , SI3457DV .

Keywords - FQI46N15 MOSFET datasheet

 FQI46N15 cross reference
 FQI46N15 equivalent finder
 FQI46N15 lookup
 FQI46N15 substitution
 FQI46N15 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.