FQI46N15 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQI46N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 45.6 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 320 nS
Cossⓘ - Output Capacitance: 520 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: I2PAK
FQI46N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQI46N15 Datasheet (PDF)
fqb46n15 fqi46n15.pdf
April 2000TMQFETQFETQFETQFETFQB46N15 / FQI46N15150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced techno
Datasheet: SDF03N80 , SDF02N65 , SDF02N20 , SDD07N65 , FQA18N50V2 , FQA19N20C , FQA38N30 , FQB46N15 , 60N06 , FQP10N50CF , FDB86366F085 , FCH077N65FF085 , FCH190N65FF085 , FQT2P25 , FQU1N80 , FDC645N , SI3457DV .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100