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FQI46N15 Specs and Replacement


   Type Designator: FQI46N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 45.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 320 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: I2PAK
 

 FQI46N15 substitution

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FQI46N15 Specs

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 fqb46n15 fqi46n15.pdf pdf_icon

FQI46N15

April 2000 TM QFET QFET QFET QFET FQB46N15 / FQI46N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced techno... See More ⇒

Detailed specifications: SDF03N80 , SDF02N65 , SDF02N20 , SDD07N65 , FQA18N50V2 , FQA19N20C , FQA38N30 , FQB46N15 , IRFP064N , FQP10N50CF , FDB86366F085 , FCH077N65FF085 , FCH190N65FF085 , FQT2P25 , FQU1N80 , FDC645N , SI3457DV .

Keywords - FQI46N15 MOSFET specs

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