HUF75639SF085A PDF Specs and Replacement
Type Designator: HUF75639SF085A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO263 D2PAK
HUF75639SF085A substitution
HUF75639SF085A PDF Specs
huf75639s3st.pdf
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber T... See More ⇒
huf75639s f085a.pdf
HUFA75639S3ST_F085A Data Sheet March 2012 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Peak Current vs Pulse Width Curve are manufactured using the UIS Rating Curve innovative UltraFET process. This advanced process technology Related Literature achieves the lowest possible on-resistance per silicon ar... See More ⇒
huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber T... See More ⇒
huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf
MOSFET Power, N-Channel, Ultrafet 100 V, 56 A, 25 mW HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 www.onsemi.com These N-Channel power MOSFETs are manufactured using the innovative Ultrafet process. This advanced process technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high ener... See More ⇒
Detailed specifications: FDMS3016DC , FDMS86101DC , FCP380N60 , FCPF380N60 , FDMS3686S , FDMA8878 , FDMS86101A , FDPC8011S , AO3400A , FDMS3620S , FDMS86300DC , FCPF400N60 , FDD86540 , FDMS015N04B , FDD390N15ALZ , FDMA7628 , FDMC86248 .
History: APT6011B2VFRG | BUZ906P
Keywords - HUF75639SF085A MOSFET specs
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History: APT6011B2VFRG | BUZ906P
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