HUF75639SF085A Datasheet. Specs and Replacement
Type Designator: HUF75639SF085A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
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HUF75639SF085A datasheet
huf75639s3st.pdf
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber T... See More ⇒
huf75639s f085a.pdf
HUFA75639S3ST_F085A Data Sheet March 2012 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Peak Current vs Pulse Width Curve are manufactured using the UIS Rating Curve innovative UltraFET process. This advanced process technology Related Literature achieves the lowest possible on-resistance per silicon ar... See More ⇒
huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber T... See More ⇒
huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf
MOSFET Power, N-Channel, Ultrafet 100 V, 56 A, 25 mW HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 www.onsemi.com These N-Channel power MOSFETs are manufactured using the innovative Ultrafet process. This advanced process technology achieves the lowest possible on- resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high ener... See More ⇒
Detailed specifications: FDMS3016DC, FDMS86101DC, FCP380N60, FCPF380N60, FDMS3686S, FDMA8878, FDMS86101A, FDPC8011S, 60N06, FDMS3620S, FDMS86300DC, FCPF400N60, FDD86540, FDMS015N04B, FDD390N15ALZ, FDMA7628, FDMC86248
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