All MOSFET. FDPF18N20FT_G Datasheet

 

FDPF18N20FT_G MOSFET. Datasheet pdf. Equivalent

Type Designator: FDPF18N20FT_G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO220F

FDPF18N20FT_G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDPF18N20FT_G PDF doc:

1.1. fdp18n20f_fdpf18n20f.pdf Size:685K _fairchild_semi

FDPF18N20FT_G
FDPF18N20FT_G

September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14? Features Description • RDS(on) = 0.12? ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 20nC) stripe, DMOS technology. • Low Crss ( Typ. 24pF) This advanced technology has been especia

1.2. fdpf18n20ft_g.pdf Size:601K _fairchild_semi

FDPF18N20FT_G
FDPF18N20FT_G

April 2013 FDPF18N20FT_G N-Channel UniFETTM FRFET® MOSFET 200 V, 18 A, 140 m � Features Description UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage • RDS(on) = 129 mΩ (Typ.) @ VGS = 10 V, ID = 9 A MOSFET family based on planar stripe and DMOS technology. This • Low Gate Charge (Typ. 20 nC) MOSFET is tailored to reduce on-state resistance, and to provide bette

3.1. fdp18n50_fdpf18n50_fdpf18n50t.pdf Size:870K _fairchild_semi

FDPF18N20FT_G
FDPF18N20FT_G

November 2013 FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Features Description • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low

3.2. fdp18n50_fdpf18n50.pdf Size:466K _fairchild_semi

FDPF18N20FT_G
FDPF18N20FT_G

April 2007 TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS(on) = 0.265? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 45 nC) stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored to

Datasheet: FDMS015N04B , FDD390N15ALZ , FDMA7628 , FDMC86248 , FDPC8013S , FDP039N08B , FDME820NZT , FDS86540 , 2SK117 , HUF76633P3_F085 , FDMS030N06B , FDMA3027PZ , FDP053N08B , FCB20N60F_F085 , FDMS8570SDC , FDMC8588DC , FDMS8558SDC .

 


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