All MOSFET. FDPF18N20FTG Datasheet

 

FDPF18N20FTG MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDPF18N20FTG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO220F

 FDPF18N20FTG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDPF18N20FTG Datasheet (PDF)

 3.1. Size:601K  fairchild semi
 fdpf18n20ft g.pdf

FDPF18N20FTG FDPF18N20FTG

April 2013FDPF18N20FT_G N-Channel UniFETTM FRFET MOSFET 200 V, 18 A, 140 m Features DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 129 m (Typ.) @ VGS = 10 V, ID = 9 AMOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 20 nC)MOSFET is tailored to reduce on-state resistance, and to provide bette

 3.2. Size:938K  onsemi
 fdp18n20f fdpf18n20ft.pdf

FDPF18N20FTG FDPF18N20FTG

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.1. Size:658K  fairchild semi
 fdpf18n20f.pdf

FDPF18N20FTG FDPF18N20FTG

September 2009UniFETTMFDP18N20F / FDPF18N20FTtmN-Channel MOSFET200V, 18A, 0.14Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 24pF)This advanced technology h

 4.2. Size:685K  fairchild semi
 fdp18n20f fdpf18n20f.pdf

FDPF18N20FTG FDPF18N20FTG

September 2009UniFETTMFDP18N20F / FDPF18N20FTtmN-Channel MOSFET200V, 18A, 0.14Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 20nC)stripe, DMOS technology. Low Crss ( Typ. 24pF)This advanced technology h

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 3N80G-TF1-T

 

 
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