FDPF18N20FTG PDF and Equivalents Search

 

FDPF18N20FTG PDF Specs and Replacement


   Type Designator: FDPF18N20FTG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO220F
 

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FDPF18N20FTG PDF Specs

 3.1. Size:601K  fairchild semi
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FDPF18N20FTG

April 2013 FDPF18N20FT_G N-Channel UniFETTM FRFET MOSFET 200 V, 18 A, 140 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 129 m (Typ.) @ VGS = 10 V, ID = 9 A MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 20 nC) MOSFET is tailored to reduce on-state resistance, and to provide bette... See More ⇒

 3.2. Size:938K  onsemi
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FDPF18N20FTG

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 4.1. Size:658K  fairchild semi
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FDPF18N20FTG

September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14 Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology h... See More ⇒

 4.2. Size:685K  fairchild semi
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FDPF18N20FTG

September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14 Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology h... See More ⇒

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Detailed specifications: FDMS015N04B , FDD390N15ALZ , FDMA7628 , FDMC86248 , FDPC8013S , FDP039N08B , FDME820NZT , FDS86540 , EMB04N03H , HUF76633P3F085 , FDMS030N06B , FDMA3027PZ , FDP053N08B , FCB20N60FF085 , FDMS8570SDC , FDMC8588DC , FDMS8558SDC .

Keywords - FDPF18N20FTG MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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