FDPF18N20FTG Datasheet. Specs and Replacement

Type Designator: FDPF18N20FTG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO220F

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FDPF18N20FTG datasheet

 3.1. Size:601K  fairchild semi
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FDPF18N20FTG

April 2013 FDPF18N20FT_G N-Channel UniFETTM FRFET MOSFET 200 V, 18 A, 140 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 129 m (Typ.) @ VGS = 10 V, ID = 9 A MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 20 nC) MOSFET is tailored to reduce on-state resistance, and to provide bette... See More ⇒

 3.2. Size:938K  onsemi
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FDPF18N20FTG

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 4.1. Size:658K  fairchild semi
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FDPF18N20FTG

September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14 Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology h... See More ⇒

 4.2. Size:685K  fairchild semi
fdp18n20f fdpf18n20f.pdf pdf_icon

FDPF18N20FTG

September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14 Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology h... See More ⇒

Detailed specifications: FDMS015N04B, FDD390N15ALZ, FDMA7628, FDMC86248, FDPC8013S, FDP039N08B, FDME820NZT, FDS86540, AO4407, HUF76633P3F085, FDMS030N06B, FDMA3027PZ, FDP053N08B, FCB20N60FF085, FDMS8570SDC, FDMC8588DC, FDMS8558SDC

Keywords - FDPF18N20FTG MOSFET specs

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