All MOSFET. SPD35N10 Datasheet

 

SPD35N10 Datasheet and Replacement


   Type Designator: SPD35N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO252
 

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SPD35N10 Datasheet (PDF)

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SPD35N10

Preliminary dataSPD35N10SIPMOS Power-TransistorProduct SummaryFeatureVDS100 V N-ChannelRDS(on) 44 m Enhancement modeID 35 A 175C operating temperatureP-TO252 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPD35N10 P-TO252 Q67042-S412535N10Maximum Ratings,at Tj = 25 C, unless otherwise specifiedParameter Symbol Value Unit

Datasheet: 2SK3255 , 2SJ648 , 2SK1937-01 , 2SK537 , SPP100N08S2-07 , SPB100N08S2-07 , SST270 , SST271 , IRFB31N20D , SPI70N10L , SPP70N10L , SPB70N10L , SI2309DS , MT3205 , BUZ78 , NVD2955 , J203 .

History: FDB2532

Keywords - SPD35N10 MOSFET datasheet

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