SPD35N10 PDF and Equivalents Search

 

SPD35N10 Specs and Replacement


   Type Designator: SPD35N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO252
 

 SPD35N10 substitution

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SPD35N10 datasheet

 ..1. Size:556K  infineon
 spd35n10.pdf pdf_icon

SPD35N10

Preliminary data SPD35N10 SIPMOS Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 44 m Enhancement mode ID 35 A 175 C operating temperature P-TO252 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPD35N10 P-TO252 Q67042-S4125 35N10 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit ... See More ⇒

Detailed specifications: 2SK3255 , 2SJ648 , 2SK1937-01 , 2SK537 , SPP100N08S2-07 , SPB100N08S2-07 , SST270 , SST271 , 8N60 , SPI70N10L , SPP70N10L , SPB70N10L , SI2309DS , MT3205 , BUZ78 , NVD2955 , J203 .

Keywords - SPD35N10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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