SPD35N10 Datasheet. Specs and Replacement

Type Designator: SPD35N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: TO252

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SPD35N10 datasheet

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SPD35N10

Preliminary data SPD35N10 SIPMOS Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 44 m Enhancement mode ID 35 A 175 C operating temperature P-TO252 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPD35N10 P-TO252 Q67042-S4125 35N10 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit ... See More ⇒

Detailed specifications: 2SK3255, 2SJ648, 2SK1937-01, 2SK537, SPP100N08S2-07, SPB100N08S2-07, SST270, SST271, SKD502T, SPI70N10L, SPP70N10L, SPB70N10L, SI2309DS, MT3205, BUZ78, NVD2955, J203

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