All MOSFET. PZP003BYB Datasheet

 

PZP003BYB MOSFET. Datasheet pdf. Equivalent

Type Designator: PZP003BYB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.15 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.11 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 11 pF

Maximum Drain-Source On-State Resistance (Rds): 13 Ohm

Package: SOT523

PZP003BYB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZP003BYB Datasheet (PDF)

1.1. pzp003byb.pdf Size:333K _unikc

PZP003BYB
PZP003BYB

PZP003BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 6Ω @VGS = 4V 110mA SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TA = 25 ° C 110 ID Continuous Drain Current1 TA = 100 ° C 70 mA IDM 400 Pulsed Drain Current2 IAS Avalanche Current 3

Datasheet: P0425AD , P0425AI , P7004EM , P7004EV , P7006BL , P7502CMG , P7503BMG , P75N02LDG , APT50M38JFLL , PZP103BYB , TD304BH , TD357EG , TD381BA , TD422BL , P4506BD , P4506BV , P45N02LDG .

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