All MOSFET. PZP003BYB Datasheet

 

PZP003BYB MOSFET. Datasheet pdf. Equivalent

Type Designator: PZP003BYB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.15 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.11 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 11 pF

Maximum Drain-Source On-State Resistance (Rds): 13 Ohm

Package: SOT523

PZP003BYB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZP003BYB Datasheet (PDF)

0.1. pzp003byb.pdf Size:333K _unikc

PZP003BYB
PZP003BYB

PZP003BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 6Ω @VGS = 4V 110mA SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TA = 25 ° C 110 ID Continuous Drain Current1 TA = 100 ° C 70 mA IDM 400 Pulsed Drain Current2 IAS Avalanche Current 3

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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