PZP003BYB PDF Specs and Replacement
Type Designator: PZP003BYB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT523
PZP003BYB substitution
PZP003BYB PDF Specs
pzp003byb.pdf
PZP003BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 6 @VGS = 4V 110mA SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 110 ID Continuous Drain Current1 TA = 100 C 70 mA IDM 400 Pulsed Drain Current2 IAS Avalanche Current 3... See More ⇒
Detailed specifications: P0425AD , P0425AI , P7004EM , P7004EV , P7006BL , P7502CMG , P7503BMG , P75N02LDG , IRF730 , PZP103BYB , TD304BH , TD357EG , TD381BA , TD422BL , P4506BD , P4506BV , P45N02LDG .
History: EKV550
Keywords - PZP003BYB MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
