All MOSFET. PZP003BYB Datasheet

 

PZP003BYB Datasheet and Replacement


   Type Designator: PZP003BYB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT523
 

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PZP003BYB Datasheet (PDF)

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PZP003BYB

PZP003BYBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 6 @VGS = 4V 110mASOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C110IDContinuous Drain Current1TA = 100 C70mAIDM400Pulsed Drain Current2IASAvalanche Current 3

Datasheet: P0425AD , P0425AI , P7004EM , P7004EV , P7006BL , P7502CMG , P7503BMG , P75N02LDG , BS170 , PZP103BYB , TD304BH , TD357EG , TD381BA , TD422BL , P4506BD , P4506BV , P45N02LDG .

History: FDU6680 | NX7002BKM | SLD2N65UZ | AFN2304S | FQP5P10 | 2N65G-TMS2-T | AP4410AGM-HF

Keywords - PZP003BYB MOSFET datasheet

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