PZP103BYB PDF Specs and Replacement
Type Designator: PZP103BYB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT523
PZP103BYB substitution
PZP103BYB PDF Specs
pzp103byb.pdf
PZP103BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 3 @VGS = 4V 30V 0.3A SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 0.3 ID Continuous Drain Current2 TA = 70 C 0.2 A IDM 3 Pulsed Drain Current1 IAS Avalanche Current 1.2 ... See More ⇒
Detailed specifications: P0425AI , P7004EM , P7004EV , P7006BL , P7502CMG , P7503BMG , P75N02LDG , PZP003BYB , IRFZ44N , TD304BH , TD357EG , TD381BA , TD422BL , P4506BD , P4506BV , P45N02LDG , P45N02LI .
History: FQD9N25
Keywords - PZP103BYB MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
