All MOSFET. PZP103BYB Datasheet

 

PZP103BYB Datasheet and Replacement


   Type Designator: PZP103BYB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT523
 

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PZP103BYB Datasheet (PDF)

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PZP103BYB

PZP103BYBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3 @VGS = 4V30V 0.3ASOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C0.3IDContinuous Drain Current2TA = 70 C0.2AIDM3Pulsed Drain Current1IASAvalanche Current 1.2

Datasheet: P0425AI , P7004EM , P7004EV , P7006BL , P7502CMG , P7503BMG , P75N02LDG , PZP003BYB , IRFZ44N , TD304BH , TD357EG , TD381BA , TD422BL , P4506BD , P4506BV , P45N02LDG , P45N02LI .

History: APT3580BN | RSR030N06

Keywords - PZP103BYB MOSFET datasheet

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