PZP103BYB Datasheet. Specs and Replacement

Type Designator: PZP103BYB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT523

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PZP103BYB datasheet

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PZP103BYB

PZP103BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 3 @VGS = 4V 30V 0.3A SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 0.3 ID Continuous Drain Current2 TA = 70 C 0.2 A IDM 3 Pulsed Drain Current1 IAS Avalanche Current 1.2 ... See More ⇒

Detailed specifications: P0425AI, P7004EM, P7004EV, P7006BL, P7502CMG, P7503BMG, P75N02LDG, PZP003BYB, IRF3205, TD304BH, TD357EG, TD381BA, TD422BL, P4506BD, P4506BV, P45N02LDG, P45N02LI

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.