All MOSFET. PZP103BYB Datasheet

 

PZP103BYB MOSFET. Datasheet pdf. Equivalent

Type Designator: PZP103BYB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 9 pF

Maximum Drain-Source On-State Resistance (Rds): 6 Ohm

Package: SOT523

PZP103BYB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZP103BYB Datasheet (PDF)

0.1. pzp103byb.pdf Size:414K _unikc

PZP103BYB
PZP103BYB

PZP103BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 3Ω @VGS = 4V 30V 0.3A SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TA = 25 ° C 0.3 ID Continuous Drain Current2 TA = 70 ° C 0.2 A IDM 3 Pulsed Drain Current1 IAS Avalanche Current 1.2

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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